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Blue Electroluminescent Devices Based on Low Resistive p-Type ZnSe

  • N. Stücheli
  • E. Bucher
Part of the NATO ASI Series book series (NSSB, volume 200)

Abstract

Blue electroluminescent metal/p-ZnSe/n-GaAs heterojunctions were prepared by vapor phase epitaxy in an open system using iodine and hydrogen as transport agents. The ZnSe layers exhibited a p-type conductivity up to 50 (Ωcm)-1 and a net carrier concentration of 4×1018 cm-3 together with a Hall mobility of 100 cm2 /Vs at room temperature. These values are the highest ones reported so far.

Keywords

Molecular Beam Epitaxy Iodine Concentration Hall Mobility Vapor Phase Epitaxy Energy Band Diagram 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • N. Stücheli
    • 1
  • E. Bucher
    • 1
  1. 1.Fakultät für PhysikUniversität KonstanzKonstanzFed. Rep. of Germany

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