Blue Electroluminescent Devices Based on Low Resistive p-Type ZnSe

  • N. Stücheli
  • E. Bucher
Part of the NATO ASI Series book series (NSSB, volume 200)


Blue electroluminescent metal/p-ZnSe/n-GaAs heterojunctions were prepared by vapor phase epitaxy in an open system using iodine and hydrogen as transport agents. The ZnSe layers exhibited a p-type conductivity up to 50 (Ωcm)-1 and a net carrier concentration of 4×1018 cm-3 together with a Hall mobility of 100 cm2 /Vs at room temperature. These values are the highest ones reported so far.


Molecular Beam Epitaxy Iodine Concentration Hall Mobility Vapor Phase Epitaxy Energy Band Diagram 
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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • N. Stücheli
    • 1
  • E. Bucher
    • 1
  1. 1.Fakultät für PhysikUniversität KonstanzKonstanzFed. Rep. of Germany

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