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Resonant Raman Scattering by Lo Phonons in II-VI Compounds and Diluted Magnetic Semiconductors

  • W. Limmer
  • H. Leiderer
  • W. Gebhardt
Part of the NATO ASI Series book series (NSSB, volume 200)

Abstract

Resonant Raman scattering by LO phonons is an optical method which provides insight into the relations between lattice-dynamical and electronic properties of crystals. A resonant enhancement of the Raman scattering efficiency is observed whenever the energy of the incident photon approaches a critical point in the combined density of states of electronic interband transitions. By analyzing the energy dependence and the absolute values of the Raman efficiency detailed information is obtained about the electron-phonon interactions, involved in the scattering process, and about band-structure parameters as gap energy E 0 , gap broadening η and the optical deformation potential Dopt.

Keywords

Scattered Photon Zeeman Splitting Resonance Behaviour Raman Tensor Resonant Raman Scattering 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • W. Limmer
    • 1
  • H. Leiderer
    • 1
  • W. Gebhardt
    • 1
  1. 1.Faculty of PhysicsUniversity of RegensburgRegensburgGermany

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