Exciton Self-Trapping in ZnSe/ZnTe Superlattice Structures
The growth by molecular beam epitaxy (MBE) and the optical and structural characterization of a variety of wide bandgap II–VI compound semiconductors have attracted much attention in the last few years; a review of these new II–VI compound semiconductor superlattices can be found in reference 1. Multiple quantum well and superlattice structures incorporating layers of the diluted magnetic (or semimagnetic) semiconductors (DMS) provide bandgap modulation while exhibiting novel phenomenon arising from the presence of the magnetic ion. Subtlties arising from the exchange interaction between the magnetic ions and band electrons in an external magnetic field provide additional insight into the spatial distribution of carrier wavefunctions in structures of atomic dimensions. In one example, this novel diagnostic tool allows determination of valence band offset in the II–VI DMS strained-layer superlattice structures.
KeywordsQuartz Recombination Helium GaAs Antimony
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- 1.R. L. Gunshor, L. A. Kolodziejski, A. V. Nurmikko, and N. Otsuka, Semimagnetic and Magnetic Semiconductor Superlattices, in: “Annual Review of Materials Science,” R. A. Huggins, ed., Annual Reviews, Inc., Palo Alto, CA (1988).Google Scholar
- 13.A. V. Nurmikko, L. A. Kolodziejski, and R. L. Gunshor, to appear in the Proceedings of the Fifth International Conference on Molecular Beam Epitaxy, August 28-September 1, 1988, Sapporo, Japan.Google Scholar