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ZnSe Growth on Non-Polar Substrates by Molecular Beam Epitaxy

  • Robert M. Park
Part of the NATO ASI Series book series (NSSB, volume 200)

Abstract

The following paper is essentially a review of an investigation carried out by the author and his former colleagues at 3M Canada Inc. into the growth of ZnSe by molecular beam epitaxy on both Ge and Si substrate materials. In-situ substrate preparation procedures developed particularly for Ge and Si are described together with techniques developed for ZnSe epitaxial growth on these materials. The primary characteristic differences observed experimentally between ZnSe layers grown on non-polar substrates as opposed to polar substrates (in particular, GaAs) will be reported and discussed. Characterization techniques employed in this study included 4. 2K photoluminescence measurements, double-crystal rocking-curve x-ray analysis and, transmission electron microscopy analysis, in both planar and cross-sectional modes.

Keywords

Molecular Beam Epitaxy Reflection High Energy Electron Diffraction Reflection High Energy Electron Diffraction Pattern ZnSe Layer ZnSe Thin Film 
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References

  1. 1.
    G. D. Studtmarm, R. L. Gunshor, L. A. Kolodziejski, M. R. Melloch, J. A. Cooper Jr., R. F. Pierret, D. P. Munich, C Choi, and N. Otsuka, Pseudomorphic ZnSe/n-GaAs doped-channel field-effect transistors by interrupted molecular beam epitaxy, Appl. Phys. Lett. 52:1249 (1988).ADSCrossRefGoogle Scholar
  2. 2.
    N. Peyghambarian, S. H. Park, S. W. Koch, A. Jeffrey, J. E. Potts, and H. Cheng, Room temperature excitonic optical non-linearities of molecular beam epitaxially grown ZnSe thin films, Appl. Phys. Lett. 52:182 (1988).ADSCrossRefGoogle Scholar
  3. 3.
    R. M. Park and H. A. Mar, Growth and photoluminescence characterization of ZnSe layers grown on (100)Ge by molecular beam epitaxy, J. Mater. Res. 1:543 (1986).ADSCrossRefGoogle Scholar
  4. 4.
    R. L. Gunshor, L. A. Kolodziejski, M. R. Melloch, M. Vaziri, C. Choi, and N. Otsuka, Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayers, Appl. Phys. Lett. 50:200 (1987).ADSCrossRefGoogle Scholar
  5. 5.
    R. M. Park, H. A. Mar, and N. M. Salansky, Molecular beam epitaxy growth of ZnSe on (100) GaAs by compound source and separate source evaporation: a comparative study, J. Vac. Sci. Technol. B3: 676 (1985).Google Scholar
  6. 6.
    R. M. Park, J. Kleiman, and H. A. Mar, Molecular beam epitaxial growth of ZnSe on (100) GaAs and (100) Ge: a comparative study of material quality, Growth of compound semiconductors, Proc. SPIE vol. 796, Ed. R. L. Gunshor and H. Morkoc, 86 (1987).Google Scholar
  7. 7.
    S. B. Sant, J. Kleiman, M. Melech, R. M. Park, G. C. Weatherly, R. W. Smith, and K. Rajan, Defect characterization of MBE-grown ZnSe/GaAs and ZnSe/Ge heterostructures by cross-sectional and planar transmission electron microscopy, Inst. Phys. Conf. Ser. 87:129 (1987).Google Scholar
  8. 8.
    J. Kleiman, R. M. Park, and H. A. Mar, On epi-layer tilt in ZnSe/Ge heterostructures prepared by molecular beam epitaxy, To be published in J. Appl. Phys. (July ’88).Google Scholar
  9. 9.
    R. M. Park and H. A. Mar, Molecular beam epitaxial growth of high-quality ZnSe on (100) Si, Appl. Phys. Lett., 48:529 (1986).ADSCrossRefGoogle Scholar
  10. 10.
    R. M. Park, H. A. Mar, and J. Kleiman, ZnSe and ZnSe/Ge epi-layers grown on (100) Si by molecular beam epitaxy, J. Crystal Growth, 86:335 (1988).ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Robert M. Park
    • 1
  1. 1.Dept. of Materials Science and EngineeringUniversity of FloridaGainesvilleUSA

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