ZnSe Growth on Non-Polar Substrates by Molecular Beam Epitaxy
The following paper is essentially a review of an investigation carried out by the author and his former colleagues at 3M Canada Inc. into the growth of ZnSe by molecular beam epitaxy on both Ge and Si substrate materials. In-situ substrate preparation procedures developed particularly for Ge and Si are described together with techniques developed for ZnSe epitaxial growth on these materials. The primary characteristic differences observed experimentally between ZnSe layers grown on non-polar substrates as opposed to polar substrates (in particular, GaAs) will be reported and discussed. Characterization techniques employed in this study included 4. 2K photoluminescence measurements, double-crystal rocking-curve x-ray analysis and, transmission electron microscopy analysis, in both planar and cross-sectional modes.
KeywordsMolecular Beam Epitaxy Reflection High Energy Electron Diffraction Reflection High Energy Electron Diffraction Pattern ZnSe Layer ZnSe Thin Film
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