II-VI/III-V Heterointerfaces: Epilayer-On-Epilayer Structures

  • R. L. Gunshor
  • L. A. Kolodziejski
  • M. R. Melloch
  • N. Otsuka
  • A. V. Nurmikko
Part of the NATO ASI Series book series (NSSB, volume 200)


The integration of several optoelectronic device functions onto a common substrate material is an area which is currently being actively pursued. In an effort to achieve this objective, experiments are under way to examine the epitaxial growth and material properties of a variety of both II–VI and III–V compounds grown on a substrate where the II–VI/III–V heterostructure can be utilized. This paper describes some recent developments involving the molecular beam epitaxial (MBE) growth and characterization of two important II–VI/III–V heterostructures: ZnSe/GaAs and InSb/CdTe; a comparison is made between epitaxial layer/substrate interfaces and epilayer/epilayer interfaces for both heterostructures. The ZnSe/GaAs heterointerface, having a 0.25% lattice constant mismatch, has potential for use in passivation of GaAs devices. The InSb/CdTe heterointerface possesses an even closer lattice match, ~0.05% (comparable to the (Al,Ga)As/GaAs material system), and is motivated by possible device applications provided by InSb/CdTe quantum wells.


Reflection High Energy Electron Diffraction Interface State Density Defense Advance Research Project Agency Defense Advance Research Project Agency Molecular Beam Epitaxial 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • R. L. Gunshor
    • 1
  • L. A. Kolodziejski
    • 1
  • M. R. Melloch
    • 1
  • N. Otsuka
    • 2
  • A. V. Nurmikko
    • 3
  1. 1.School of Electrical EngineeringPurdue UniversityWest LafayetteUSA
  2. 2.Materials EngineeringPurdue UniversityWest LafayetteUSA
  3. 3.Division of Engineering and Department of PhysicsBrown UniversityProvidenceUSA

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