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Wide Bandgap II-VI Compound Superlattices Prepared by MBE and MOMBE

  • Makoto Konagai
  • Shiro Dosho
  • Yasushi Takemura
  • Nobuaki Teraguchi
  • Ryuhei Kimura
  • Kiyoshi Takahashi
Part of the NATO ASI Series book series (NSSB, volume 200)

Abstract

II–VI compound semiconductors, especially ZnS, ZnSe and ZnTe, are considered to be the promising materials for LEDs and laser diodes emitting blue light. Recently, ZnSe pn diodes have been successfully grown on GaAs by MOCVD using lithium nitride as a p-type dopant. To make a pn junction in the wide bandgap II–VI compound semiconductors, we selected a ZnSe-ZnTe superlattice structure2. We have prepared ZnSe-ZnTe strained-layer superlattices(SLS) by MBE with a modulation doping technique3. The concept of producing both p and n-type conduction using a superlattice is illustrated in Fig.1. Modulation doping of the ZnSe layers with Ga is thought to result in a n-type SLS. P-type SLS can similarly be obtained by modulation doping with Sb in the ZnTe layers. This opens up the possibility of fabricating a pn junction by using ZnSe-ZnTe SLSs. The modulation doping technique can be also applied to the ZnS(ZnSSe)- ZnTe system.

Keywords

Atomic Layer Epitaxy ZnSe Layer Modulation Doping ZnTe Layer Strong Blue Emission 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    T. Yasuda, I. Mitsuishi, and H. Kukimoto, Metalorganic vapor phase epitaxy of low-resistivity p-type ZnSe, Appl. Phys. Lett. 52:57(1988)ADSCrossRefGoogle Scholar
  2. 2.
    M. Kobayashi, N. Mino, H. Katagiri, R. Kimura, M. Konagai, and K. Takahashi, Photoluminescence study of ZnSe-ZnTe strained-layer superlattices grown on InP substrates, J. Appl. Phys. 60:773(1986)ADSCrossRefGoogle Scholar
  3. 3.
    M. Kobayashi, S. Dosho, A. Imai, R. Kimura, M. Konagai, and K. Takahashi, Realization of both p- and n-type conduction for ZnSe-ZnTe strained-layer superlattices, Appl. Phys. Lett. 51:1602(1987)ADSCrossRefGoogle Scholar
  4. 4.
    T. Yao and T. Takeda, Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs, Appl. Phys. Lett. 48:160(1986)ADSCrossRefGoogle Scholar
  5. 5.
    M. Kobayashi, M. Konagai, and K. Takahashi, Lattice strain and lattice dynamics of ZnSe-ZnTe strained-layer superlattices, J. Appl. Phys. 61:1015(1987)ADSCrossRefGoogle Scholar
  6. 6.
    A. Imai, M. Kobayashi, S. Dosho, M. Konagai, and K. Takahashi, Inter-diffusion in ZnSe-ZnTe strained-layer superlattices, J. Appl. Phys. 63: (1988) in pressGoogle Scholar
  7. 7.
    H. Ando, A. Taike, M. Konagai, and K. Takahashi, Metalorganic molecular-beam epitaxy of ZnSe and ZnS, J. Appl. Phys. 62:1251(1987)ADSCrossRefGoogle Scholar
  8. 8.
    A. Taike, N. Teraguchi, M. Konagai, and K. Takahashi, Growth of ZnSe-ZnS Strained-Layer Superlattices by Metalorganic Molecular Beam Epitaxy, Jpn. J. Appl. Phys. 26:L989(1987)ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Makoto Konagai
    • 1
  • Shiro Dosho
    • 1
  • Yasushi Takemura
    • 1
  • Nobuaki Teraguchi
    • 1
  • Ryuhei Kimura
    • 1
  • Kiyoshi Takahashi
    • 1
  1. 1.Department of Electrical and Electronic EngineeringTokyo Istitute of TechnologyMeguro-ku, Tokyo 152Japan

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