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Optical Properties of Bulk II-VI Semiconductors: Effect of Shallow Donor States

  • E. Kartheuser
Part of the NATO ASI Series book series (NSSB, volume 200)

Abstract

In the present work we discuss two experimental techniques that enable to identify shallow donor levels in II–VI semiconductors: extrinsic oscillatory photoconductivity in n-CdTe and electric dipole spin resonance of donor states in Cd1-X MnX Se. Comparison between theory and experiment lead to useful informations on electron lifetime and capture cross section as well as on energy levels, spin-orbit coupling and g-factor of donors.

Keywords

Integrate Absorption Coefficient Shallow Donor Electron Lifetime Longitudinal Optical Phonon Longitudinal Optical 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • E. Kartheuser
    • 1
  1. 1.Institut de PhysiqueUniversité de LiègeLiege 1Belgium

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