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Electrical and Structural Properties of Wide Bandgap II-VI Semiconducting Compounds

  • A. W. Brinkman
Part of the NATO ASI Series book series (NSSB, volume 200)

Abstract

The II–VI semiconductors are composed of equimolar proportions of a group lib element (Zn,Cd,Hg) and a group IVa element (S,Se,Te). They crystallise in either the cubic zincblende (sphalerite) or the hexagonal wurtzite structures, in which the metal ion is surrounded tetrahedrally by four chalcogen ions. Many of the important properties derive from the tetrahedral bonding and the valency. Band structure calculations, have established that the zinc and cadmium compounds are all direct semiconductors. Thus the need to conserve crystal momentum does not inhibit band-to-band radiative recombination and the II–VI semiconducting compounds are efficient emitters and detectors of light. It was as phosphors for CRT displays that these materials first found application.

Keywords

Misfit Dislocation Partial Dislocation Perfect Dislocation ZnSe Layer Extra Half Plane 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • A. W. Brinkman
    • 1
  1. 1.Applied Physics, SEASUniversity of DurhamDurhamUK

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