Optoelectronic Devices from Wide Band Gap II-VI Semiconductors

  • R. N. Bhargava
Part of the NATO ASI Series book series (NSSB, volume 200)


The recent advances made in the reproducible growth of the high quality wide band gap II–VI materials, particularly the thin films and the quantum structures grown by MBE and MOCVD are discussed. The combination of the low temperature growth and the choice of purer source materials has resulted in decreased background impurity concentration to the extent that meaningful optical and electrical experiments can be performed. These improvements in the materials are expected to yield devices, an area of research presently being pursued actively. Some of these devices are (i) a blue Laser/LED based on p-n junction; (ii) electron beam pumped visible lasers; and (iii) novel optical devices based on non-linear properties of II–VT’s. Both the concepts and the key recent research results related to the above devices obtained by us and others are reviewed.


Visible Laser Shallow Acceptor Background Impurity Atomic Layer Epitaxy Sodium Niobate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • R. N. Bhargava
    • 1
  1. 1.Philips LaboratoriesDivision of North American Philips CorporationBriarcliff ManorUSA

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