Characterization of ZrO2 Buffer Layers for Sequentially Evaporated Y-Ba-Cu-O on Si and Al2O3 Substrates
A large variety of techniques have been employed for the formation of thin films of the high temperature superconducting oxides on many different substrates. These efforts have been driven by the desire to investigate and develop electronic applications of these materials. Several of the substrates that have been used possess undesirable electronic properties, such as the large dielectric constant of SrTiO3. For many applications it is desirable to obtain the superconducting films on silicon or, for high frequency applications, on substrates such as Al2O3 or GaAs. Unfortunately, the deleterious interactions between the films and these substrates or common dielectrics1, such as silicon dioxide, result in unacceptable degradation of both the superconductor and the substrate. This has led to the investigation of the use of thin films of materials such as ZrO2 2 or silver3 as buffer layers between the superconductor and the substrate.
KeywordsBuffer Layer Auger Electron Spectroscopy Sapphire Substrate High Frequency Application Sputter Time
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