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Metal-Organics for CVD of HTcS

  • C. I. M. A. Spee
  • A. Mackor

Abstract

Chemical vapor deposition CVD has a high potential for preparing thin films of HTCS (YBa2Cu3O7 and Bi-Sr-Ca-Cu-O or Tl-Ca-Ba-Cu-O) on substrates (SrTiO3 ZrO2 MgO or other) by using suitable, volatile metal-organic precursors. As in semiconductor manufacturing, one may expect to establish mild process conditions and to obtain well-controlled microstructure, composition and product properties of the deposited layer in MO-CVD. A particular advantage of CVD over sputtering is its combination of preparation and shaping, e.g. on non-flat substrates. Very recently some groups have shown considerable progress and promise of MO-CVD for the preparation of thin films of Y-Ba-Cu-O [1–9] and Bi-Sr-Ca-Cu-O thin films [10–12].

Keywords

Vapor Pressure Chemical Vapor Deposition Vapor Pressure Measurement Metal Acetylacetonates Mild Process Condition 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • C. I. M. A. Spee
    • 1
  • A. Mackor
    • 1
  1. 1.TNO Institute of Applied ChemistryZeistThe Netherlands

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