Film Fabrication of Artificial (BiO)/(SrCaCuO) Layered Structure

  • J. Fujita
  • T. Tatsumi
  • T. Yoshitake
  • H. Igarashi


Artificial (BiO)/(SrCaCuO) layered structures epitaxially grown on (100) MgO substrate by using oxygen-gas-reactive dual ion beam sputtering were studied. Films with artificial periods of 12, 15 and 18Å (which are identical to bulk 24, 30 and 36Å phases) were selectively formed by adjusting the thickness of SrCaCuO layer sandwiched by BiO bi-planes. Epitaxial films designed to have high Tc phase period (36Å) with total thickness of about 300Å showed a onset Tc of 110K and a zero resistivity temperature of 45K without post annealing. The layer by layer growth by the shuttering technique was found to be very effective to form smooth and fine superconductive thin films.


Film Growth Epitaxial Film Reflect High Energy Electron Diffraction Bulk Single Crystal Reflect High Energy Electron Diffraction Pattern 
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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • J. Fujita
    • 1
  • T. Tatsumi
    • 2
  • T. Yoshitake
    • 1
  • H. Igarashi
    • 1
  1. 1.Fundamental Research LaboratoriesNEC CorporationMiyamae-ku, Kawasaki, 213Japan
  2. 2.Microelectronics Research LaboratoriesNEC CorporationMiyamae-ku, Kawasaki, 213Japan

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