In-Situ Growth of High TC Thin Films
A high pressure reactive evaporation process and a high pressure reactive sputtering process have been developed for the growth of high quality thin films of YBa2Cu3O7. Both techniques, when used with heated substrates, are effective in the formation of the 123 phase in-situ during the film growth. With reactive evaporation only a cooldown anneal in a higher pressure oxygen ambient is necessary to obtain good superconducting properties. For the reactive sputtering process, the best results are obtained with either a substrate temperature of 720–770 C during growth, or lower temperatures during growth and a brief, post growth, rapid thermal anneal. Fully epitaxial growth has been achieved with single crystal MgO substrates. The resultant films, which can be quite smooth and uniform, have been patterned to micron and submicron dimensions and the transport properties of these microstructures have been examined.
KeywordsSubstrate Temperature Critical Current Density Rapid Thermal Anneal Yttria Stabilize Zirconia Rutherford Backscattering Spectroscopy
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