RHEED Intensity Oscillations in Metal Epitaxy
Following the first reports of RHEED intensity oscillations during molecular beam epitaxy (MBE) of GaAs[l,2] this phenomenon has been studied extensively but the analysis of the intensity oscillations and their physical origin are still a matter of debate. Most of this work was done under near-equilibrium conditions. On the other hand, well-pronounced RHEED intensity oscillations have been observed in Si and Ge molecular beam homo-epitaxy far from equilibrium[4–6]. In the case of Si and Ge the configuration-dependent reactive-incorporation (CDRI) model is clearly not applicable. Instead, the limited diffusion length-induced two-dimensional nucleation model gives a good description of the temperature dependence of the damping of the oscillations. This has also been confirmed by computer simulations.
KeywordsMolecular Beam Epitaxy Molecular Beam Epitaxy Growth Intensity Oscillation RHEED Pattern Metal Pair
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