RHEED Intensity Oscillations in Metal Epitaxy

  • G. Lilienkamp
  • C. Kozioł
  • E. Bauer
Part of the NATO ASI Series book series (NSSB, volume 188)


Following the first reports of RHEED intensity oscillations during molecular beam epitaxy (MBE) of GaAs[l,2] this phenomenon has been studied extensively but the analysis of the intensity oscillations and their physical origin are still a matter of debate[3]. Most of this work was done under near-equilibrium conditions. On the other hand, well-pronounced RHEED intensity oscillations have been observed in Si and Ge molecular beam homo-epitaxy far from equilibrium[4–6]. In the case of Si and Ge the configuration-dependent reactive-incorporation (CDRI) model[7] is clearly not applicable. Instead, the limited diffusion length-induced two-dimensional nucleation model gives a good description of the temperature dependence of the damping of the oscillations[8]. This has also been confirmed by computer simulations[9].


Molecular Beam Epitaxy Molecular Beam Epitaxy Growth Intensity Oscillation RHEED Pattern Metal Pair 


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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • G. Lilienkamp
    • 1
  • C. Kozioł
    • 1
    • 2
  • E. Bauer
    • 1
  1. 1.Physikalisches InstitutTechnische Universität ClausthalClausthal-ZellerfeldGermany
  2. 2.Institute of Experimental PhysicsUniversity of WrocławWrocławPoland

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