Theory of RHEED by Reconstructed Surfaces
Surface reconstructions are very well known in semiconductor physics. In particular the (001) surface of GaAs exhibits a wide variety of reconstructions, especially during MBE growth. For example, 2×4, 3×1 and c(4x4) reconstructions have all been observed under appropriate conditions[1,2]. Since RHEED is widely used to monitor MBE growth[3,4,5] it is important to understand the effect of the reconstruction on the RHEED intensities. It turns out that such understanding can be of great help in deducing the atomic geometry of surface reconstructions.
KeywordsIncident Beam Real Space Reconstructed Surface Atomic Displacement Bragg Diffraction
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