RHEED Intensity Oscillations During MBE Growth of III-V Compounds - An Overview

  • B. A. Joyce
  • J. H. Neave
  • J. Zhang
  • P. J. Dobson
Part of the NATO ASI Series book series (NSSB, volume 188)


Reflection high energy electron diffraction (RHEED) has proved to be a very versatile technique for growth and surface studies of semiconductor films prepared by molecular beam epitaxy (MBE). The combination of the forward scattering geometry of RHEED with the arrangement of MBE in which the atomic and molecular beams are incident almost normally on the substrate enables diffraction features to be monitored continuously during growth.


Reflection High Energy Electron Diffraction Intensity Oscillation Diffraction Condition Surface Migration Terrace Width 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • B. A. Joyce
    • 2
  • J. H. Neave
    • 2
  • J. Zhang
    • 1
    • 2
  • P. J. Dobson
    • 1
  1. 1.Philips Research LaboratoriesRedhill, SurreyUK
  2. 2.Department of PhysicsImperial College of Science and TechnologySouth Kensington, LondonUK

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