Abstract
A variety of techniques for studying surfaces have been developed or adapted to UHV recently, including TEM, REM, SEM and STM. The scanning or probe forming techniques offer a great advantage in flexibility over parallel imaging techniques since many different signals may be used to form the image. A familiar example is Auger electron yield, used in scanning Auger microprobe instruments. RHEED provides a particularly strong and surface sensitive signal, yet it is seldom used or exploited in UHV microprobe instruments, primarily due to the conflicting requirements of a well colli-mated beam and a small spot size. Use of a field emission gun (FEG) with its superior brightness makes possible a combined scanning diffraction and microanalysis instrument[1]. We describe here such a custom built UHV-SEM-FEG+diffraction instrument and discuss is application to a study of epitaxial growth of nickel overlayers on silicon.
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© 1988 Plenum Press, New York
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Bennett, P.A., Johnson, A.P. (1988). Scanning RHEED Studies of Silicide Formation in a UHV-SEM. In: Larsen, P.K., Dobson, P.J. (eds) Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces. NATO ASI Series, vol 188. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5580-9_26
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DOI: https://doi.org/10.1007/978-1-4684-5580-9_26
Publisher Name: Springer, Boston, MA
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