Structural and Chemical Characterization of Semiconductor Interfaces by High Resolution Transmission Electron Microscopy

  • A. Ourmazd
Part of the NATO ASI Series book series (NSSB, volume 183)


The fundamentals of lattice image formation are reviewed to clarify the possibilities and limitations of High Resolution Transmission Electron Microscopy, with special reference to the Si/SiO 2 and semiconductor/semiconductor interfaces.


High Resolution Transmission Electron Microscopy High Resolution Transmission Electron Microscopy Interfacial Oxide Semiconductor Interface Crystalline Oxide 
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    For a detailed discussion of HRTEM see e.g.: J C H Spence, Experimental High Resolution Transmission Electron Microscopy (Oxford University Press, New York, 1980).Google Scholar
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    A Ourmazd, W T Tsang, J A Rentschler and D W Taylor, Appl Phys Lett, 50, 1417 (1987).ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • A. Ourmazd
    • 1
  1. 1.AT&T Bell LaboratoriesHolmdelUSA

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