Interface Characterization of GaInAs-InP Superlattices Grown by Low Pressure Metalorganic Chemical Vapor Deposition

  • Manijeh Razeghi
  • Philippe Maurel
  • Franck Omnes
Part of the NATO ASI Series book series (NSSB, volume 183)


Very high quality Ga0.47In0.53 As-InP heterojunctions, quantum wells and superlattices have been grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Excitation spectroscopy shows evidence of strong and well resolved exciton peaks in the luminescence and excitation spectra of GalnAs-InP quantum wells. Optical absorption shows roomtemperature exciton in GalnAs-InP superlattices (M. Razeghi et al., 1983)1. Quantum wells as thin as 8 A with a photoluminescence linewidth of 9 meV have been grown.


Quantum Hall Effect Negative Differential Resistance Photoluminescence Excitation Spectrum MOCVD Reactor Cyclotron Resonance Line 
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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • Manijeh Razeghi
    • 1
  • Philippe Maurel
    • 1
  • Franck Omnes
    • 1
  1. 1.Laboratoire Matériaux Exploratoires/LCROrsay CedexFrance

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