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Progress Report on Molecular Beam Epitaxy of III–V Semiconductors — From Fibonacci to Monolayer Superlattices

  • L. Tapfer
  • J. Nagle
  • K. Ploog
Part of the NATO ASI Series book series (NSSB, volume 183)

Abstract

We present two examples for the unique capability of molecular beam epitaxy to modify the bulk properties of semiconductors through band-gap (or wavefunction) and structure-factor engineering in artificially layered semiconductors, i.e. GaAs/AlAs short-period and ultrathin-layer superlattices as well as Fibonacci, Thue-Morse and random GaAs/AlAs superlattices. In the first example the concept of artificially layered semiconductor structures is scaled down to its ultimate physical limit normal to the crystal surface. In the second example we consider artificially layered structures that range between periodic and random systems. These quasiperiodic structures are obtained by imposing an incommensurate modulation of composition on the direction of layer sequence.

Keywords

Molecular Beam Epitaxy Satellite Peak Fibonacci Sequence RHEED Pattern Super Lattice 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • L. Tapfer
    • 1
  • J. Nagle
    • 1
  • K. Ploog
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart-80FR-Germany

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