Molecular Beam Epitaxy of Ga0.99Be0.01As for very high Speed Heterojunction Bipolar Transistors
In this paper, we present the molecular beam epitaxy of very high p-type doping levels into GaAs using beryllium as a dopant. Very low resistivity, multilayer-compatible material is achieved with doping levels as high as 2 × 1020cm-3. We study the beryllium incorporation during growth, and discuss, based on experimental results, how such layers can significantly improve the speed of heterojunction bipolar transistors.
KeywordsMolecular Beam Epitaxy Doping Level Reflection High Energy Electron Diffraction Current Gain High Doping Level
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