Magneto-Optics of Excitons in GaAs-(GaAl) As Quantum Wells
We report low temperature luminescence measurements of the energy shift and splitting of excitons in GaAs-(GaAl)As quantum wells as a function of well width and magnetic field strength. The maximum strength of the field was 9.5 T and its direction was perpendicular to the interfaces. We have performed variational calculations of the exciton binding energy to explain the experimental data of the diamagnetic shift. The present calculations incorporate the valence-band nonparabolicity resulting from the mixing of heavy- and light-hole states.
KeywordsHeavy Hole Exciton Binding Energy Excitonic Line Diamagnetic Shift Wide Quantum
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