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Magneto-Optics of Excitons in GaAs-(GaAl) As Quantum Wells

  • W. Ossau
  • B. Jäkel
  • E. Bangert
  • G. Weimann
Part of the NATO ASI Series book series (NSSB, volume 183)

Abstract

We report low temperature luminescence measurements of the energy shift and splitting of excitons in GaAs-(GaAl)As quantum wells as a function of well width and magnetic field strength. The maximum strength of the field was 9.5 T and its direction was perpendicular to the interfaces. We have performed variational calculations of the exciton binding energy to explain the experimental data of the diamagnetic shift. The present calculations incorporate the valence-band nonparabolicity resulting from the mixing of heavy- and light-hole states.

Keywords

Heavy Hole Exciton Binding Energy Excitonic Line Diamagnetic Shift Wide Quantum 
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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • W. Ossau
    • 1
  • B. Jäkel
    • 1
  • E. Bangert
    • 1
  • G. Weimann
    • 2
  1. 1.Physikalisches Institut der Universität WürzburgGermany
  2. 2.Forschungslabor der Deutschen BundespostDarmstadtGermany

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