Optical Measurements of Acceptor Concentration Profiles at GaAs/GaAlAs Quantum Well Interfaces
There has been in the recent years an impressive amount of studies of low dimensional semiconductor systems such as quantum wells (QWs), superlattices and modulation-doped heterojunctions. The importance of doping such structures for device applications has very early led to both theoretical [1–4] and experimental [5–7] works on shallow impurities, showing the impurity states in quasi-2 dimensional systems to possess specific properties unencountered in bulk materials. In particular, the binding energies of impurities are found theoretically to vary with well thicknesses and impurity position within the QW.
KeywordsGrowth Axis Excitonic Line Excitation Power Density Fermi Golden Rule Impurity Position
Unable to display preview. Download preview PDF.