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In-Plane Electronic Excitations in GaAs/GaAlAs Modulation Doped Quantum Wells

  • N. Mestres
  • G. Fasol
  • K. Ploog
Part of the NATO ASI Series book series (NSSB, volume 183)

Abstract

We study the in-plane motion of electrons in modulation doped GaAs/AlGaAs multiple quantum wells by resonant Raman scattering. Electrons from donors incorporated in the barriers of these structures drop into the GaAs wells, forming a multilayered 2D electron gas with very high mobility. The long range interlayer Coulomb interaction couples the in-plane motion of electrons in different wells, even if there is no wave function overlap, as in our present samples. The interlayer Coulomb interaction thus leads to a band of N non-degenerate coupled layer plasmon eigenmodes for an electron system with N sheets. Using resonant Raman scattering we measure the dispersion of these discrete layer plasmon eigenmodes and their coupling with intersubband excitations yielding a very detailed instrument for the characterisation of multilayered electron systems. We measure the single particle excitation spectra as a function of k||. We fit the single particle excitation spectra with the Lindhard formula for the dielectric response function of the 2D electron gas and we show that the electron density and the scattering time can thus be determined optically.

Keywords

Single Particle Excitation Plasmon Dispersion Dielectric Response Function Resonant Raman Scattering Light Scattering Spectrum 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • N. Mestres
    • 1
  • G. Fasol
    • 1
  • K. Ploog
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart 80Fed. Republic of Germany

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