Hot Electron Capture in GaAs MQW: NDR and Photo-Emission

  • N. Balkan
  • B. K. Ridley
Part of the NATO ASI Series book series (NSSB, volume 183)


We present experimental results on the hot electron distribution and energy relaxation process in doped GaAs/AlGaAs quantum wells. The experiments make use of steady state hot electron photoluminescence spectroscopy and fast pulse transport measurement techniques. Our results reveal a negative differential resistance (NDR) with threshold fields of a few hundred volts cm-1 and a surface emission of photons when the electric field is applied along the quantum well layers. These observations are shown to be associated with the quality of the quantum wells.


Electric Field Pulse Free Exciton Negative Differential Resistance High Energy Tail Carrier Temperature 
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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • N. Balkan
    • 1
  • B. K. Ridley
    • 1
  1. 1.Department of PhysicsUniversity of EssexColchesterUK

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