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Effective-Mass Theory of Electron States in Heterostructures and Quantum Wells

  • U. Rössler
  • F. Malcher
  • A. Ziegler
Part of the NATO ASI Series book series (NSSB, volume 183)

Abstract

For describing near band edge states of intrinsic (subbands) and extrinsic (impurity states) character in semiconductor structures effective-mass theory is as important as in bulk semiconductors. We 1) reconsider the concept of effective-mass theory in this context, 2) demonstrate, how in a self-consistent calculation of subband states in modulation doped heterostructures the implications of the bulk band structure and doping profiles are considered, and 3) suggest a new concept for treating the impurity problem.

Keywords

Impurity State Semiconductor Structure Inversion Channel Subband Energy Lower Conduction Band 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • U. Rössler
    • 1
  • F. Malcher
    • 1
  • A. Ziegler
    • 1
  1. 1.Institut für Theoretische PhysikUniversität RegensburgRegensburgGermany

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