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“Pinning” of Transition-Metal Impurity Levels

  • J. Tersoff
Part of the NATO ASI Series book series (NSSB, volume 183)

Abstract

This summary abstract reviews the conclusions of recent work by Tersoff and Harrison,1 using the defect-molecule approach of Picoli, Chomette and Lannoo.2 For a more detailed presentation, the reader is referred to Ref. 1, and to references therein.

Keywords

Schottky Barrier Impurity Level Cation Vacancy Excess Charge Superlattice Semiconductor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    J. Tersoff and W. A. Harrison, Phys. Rev. Lett. 58, 2367 (1987).ADSCrossRefGoogle Scholar
  2. 2.
    G. Picoli, A. Chomette and M. Lannoo, Phys. Rev. B 30, 7138 (1984).ADSCrossRefGoogle Scholar
  3. 3.
    W. A. Harrison, “Electronic Structure and the Properties of Solids”, Freeman (New York, 1980).Google Scholar
  4. 4.
    M. J. Caldas, A. Fazzio and A. Zunger, J. Appl. Phys. 45, 671 (1984).Google Scholar
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    W. A. Harrison and J. Tersoff, J. Vac. Sci. Technol. B 4, 1068 (1986).CrossRefGoogle Scholar
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    J. M. Langer and H. Heinrich, Phys. Rev. Lett. 55, 1414 (1985).ADSCrossRefGoogle Scholar
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    A. Zunger, Ann. Rev. Mater. Sci. 15, 411 (1985).ADSCrossRefGoogle Scholar
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    J. Tersofr, Phys. Rev. Lett. 56, 675 (1986).ADSCrossRefGoogle Scholar
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  12. 10.
    J. Tersoff, Phys. Rev. Lett. 52, 465 (1984); and relerenees therein.ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • J. Tersoff
    • 1
  1. 1.IBM Thomas J. Watson Research CenterYorktown HeightsUSA

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