“Pinning” of Transition-Metal Impurity Levels

  • J. Tersoff
Part of the NATO ASI Series book series (NSSB, volume 183)


This summary abstract reviews the conclusions of recent work by Tersoff and Harrison,1 using the defect-molecule approach of Picoli, Chomette and Lannoo.2 For a more detailed presentation, the reader is referred to Ref. 1, and to references therein.


Schottky Barrier Impurity Level Cation Vacancy Excess Charge Superlattice Semiconductor 
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    J. Tersoff and W. A. Harrison, Phys. Rev. Lett. 58, 2367 (1987).ADSCrossRefGoogle Scholar
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    G. Picoli, A. Chomette and M. Lannoo, Phys. Rev. B 30, 7138 (1984).ADSCrossRefGoogle Scholar
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    W. A. Harrison, “Electronic Structure and the Properties of Solids”, Freeman (New York, 1980).Google Scholar
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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • J. Tersoff
    • 1
  1. 1.IBM Thomas J. Watson Research CenterYorktown HeightsUSA

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