“Pinning” of Transition-Metal Impurity Levels
This summary abstract reviews the conclusions of recent work by Tersoff and Harrison,1 using the defect-molecule approach of Picoli, Chomette and Lannoo.2 For a more detailed presentation, the reader is referred to Ref. 1, and to references therein.
KeywordsSchottky Barrier Impurity Level Cation Vacancy Excess Charge Superlattice Semiconductor
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