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Electronic States in Heavily and Ordered Doped Superlattice Semiconductors

  • Inder P. Batra
  • C. Y. Fong
Part of the NATO ASI Series book series (NSSB, volume 183)

Abstract

We have calculated the electronic band structure of two heavily and ordered doped superlattice semiconductors: (I) GaAs/AlAs doped with Si and (II) Ge/Si doped with Al and As. For case (I), the properties of the donor states in 2- and 3-layers of GaAs and ALAs have been examined. The donor state charge is found to be non-hydrogenic. The polarization of the charge affects the band alignment. For case (II), superlattice grown on Si substrate with 2 atomic layers of Ge and 10 atomic layers of Si is considered. We have doped Al and As in the Si region but near the interfaces. The properties of the acceptor and the donor states in the presence of the thin Geregion have been analyzed. No impurity related states emerge in the band gap region.

Keywords

Quantum Well Donor State Impurity Band Band Alignment Interface Dipole 
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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • Inder P. Batra
    • 1
  • C. Y. Fong
    • 2
  1. 1.IBM Research DivisionAlmaden Research CenterSan JoseUSA
  2. 2.Department of PhysicsUniversity of CaliforniaDavisUSA

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