Electronic States in Heavily and Ordered Doped Superlattice Semiconductors

  • Inder P. Batra
  • C. Y. Fong
Part of the NATO ASI Series book series (NSSB, volume 183)


We have calculated the electronic band structure of two heavily and ordered doped superlattice semiconductors: (I) GaAs/AlAs doped with Si and (II) Ge/Si doped with Al and As. For case (I), the properties of the donor states in 2- and 3-layers of GaAs and ALAs have been examined. The donor state charge is found to be non-hydrogenic. The polarization of the charge affects the band alignment. For case (II), superlattice grown on Si substrate with 2 atomic layers of Ge and 10 atomic layers of Si is considered. We have doped Al and As in the Si region but near the interfaces. The properties of the acceptor and the donor states in the presence of the thin Geregion have been analyzed. No impurity related states emerge in the band gap region.


Quantum Well Donor State Impurity Band Band Alignment Interface Dipole 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    G. Bastard, Phys. Rev. B24:4714 (1981).ADSGoogle Scholar
  2. 2.
    C. Mailhoit, Yia-Chung Chang, and T. C. McGill, Phys. Rev. B26:4449 (1982).ADSGoogle Scholar
  3. 3.
    R. L. Greene and K. K. Bajaj, Solid State Commun. 45:825 (1983).ADSCrossRefGoogle Scholar
  4. 4.
    C. Priester, G. Bastard, G. Allan, and M. Lannoo, Phys. Rev. B30:6029 (1984).ADSGoogle Scholar
  5. 5.
    P. Csavinszky and A. M. Elabsy, Phys. Rev. B32, 6498 (1985).ADSGoogle Scholar
  6. 6.
    G. P. Srivastava, These Proc; U. Rössler, These Proc. Google Scholar
  7. 7.
    S. T. Pantelides and C. T. Sah, Phys. Rev. B10:621 (1974).ADSGoogle Scholar
  8. 8.
    S. T. Pantelides and C. T. Sah, Phys. Rev. B10:638 (1974).ADSGoogle Scholar
  9. 9.
    J. Bernholc and S. T. Pantilides, Phys. Rev. B15:4935 (1977).ADSGoogle Scholar
  10. 10.
    F. Capasso, K. Mohammed, and A. Y. Cho J. Vac. Sci. Technol. B3:1245 (1985).Google Scholar
  11. 11.
    J. S. Nelson, C. Y. Fong, I. P. Batra B. M. Klein, and W. E. Pickett, Phys. Rev. B (to be published).Google Scholar
  12. 12.
    M. Schlüter, J. R. Chelikowsky, S. G. Louie, and M. L. Cohen, Phys. Rev. B12:4200 (1975)ADSGoogle Scholar
  13. 12a.
    J. Ihm, A. Zunger, and M. L. Cohen, J. Phys. C12:4409 (1979)ADSGoogle Scholar
  14. 12b.
    M. T. Yin and M. L. Cohen, Phys. Rev. Lett. 45:1004 (1980)ADSCrossRefGoogle Scholar
  15. 12c.
    K. C. Pandey, Phys. Rev. Lett. 49:223 (1982)ADSCrossRefGoogle Scholar
  16. 12d.
    I. P. Batra and S. Ciraci, Phys. Rev. B33:4313 (1986).ADSGoogle Scholar
  17. 13.
    G. B. Bachelet, D. R. Hamann, and M. Schlüter, Phys. Rev. B26:4199 (1982).ADSGoogle Scholar
  18. 14.
    I. P. Batra, S. Ciraci, and J. S. Nelson, J. Vac. Sci. Technol. B5:1300 (1987).Google Scholar
  19. 15.
    F. Ciedeira, A. Pinczuk, J. C. Bean, B. Batlogg, and B. A. Wilson, App. Phys. Lett. 45:1138 (1984).ADSCrossRefGoogle Scholar
  20. 16.
    G. Abstreiter, H. Brugger, T. Wolf, R. Zachai, and Ch. Zeller, in: “Two-Dimensional Systems: Physics and New Devices,” G. Bauer, F. Kuchar, and H. Heinrich, eds., Springer-Verlag, Berlin, 130 (1986).Google Scholar
  21. 17.
    C. G. Van de Walle and R. M. Martin, Phys. Rev. B34:79 (1972)Google Scholar
  22. 17a.
    C. G. Van de Walle and R. M. Martin, Phys. Rev. B52:553 (1972).Google Scholar
  23. 18.
    G. H. Döhler, Phys. Status Solidi B52:79 (1972)ADSCrossRefGoogle Scholar
  24. 18a.
    G. H. Döhler, Phys. Status SolidiB52, 553 (1972).Google Scholar
  25. 19.
    Warren E. Pickett, Steven G. Louie, and Marvin L. Cohen, Phys. Rev. B17:815 (1978).ADSGoogle Scholar
  26. 20.
    K. M. Ho, Marvin L. Cohen, and M. Schlüter, Phys. Rev. B15:3888 (1977); also see Ref. 12.ADSGoogle Scholar
  27. 21.
    J. S. Nelson, private communication.Google Scholar

Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • Inder P. Batra
    • 1
  • C. Y. Fong
    • 2
  1. 1.IBM Research DivisionAlmaden Research CenterSan JoseUSA
  2. 2.Department of PhysicsUniversity of CaliforniaDavisUSA

Personalised recommendations