Shallow and Deep Impurity Investigations: The Important Step Towards a Microwave Field-Effect Transistor Working at Cryogenic Temperatures

  • W. Prost
  • W. Brockerhoff
  • M. Heuken
  • S. Kugler
  • K. Heime
  • W. Schlapp
  • G. Weimann
Part of the NATO ASI Series book series (NSSB, volume 183)


Current, amplification, output power and frequency limits of field-effect transistors (FETs) are determined by both the carrier concentration and the carrier transport properties (mobility and velocity) in the channel. In GaAs MESFETs the current conducting channel itself is doped with shallow impurities up to levels of 1017 or 1018 cm-3. These high concentrations degrade the mobility.


Cryogenic Temperature Deep Level Transient Spectroscopy Gate Bias Photon Energy Range Conventional Structure 
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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • W. Prost
    • 1
  • W. Brockerhoff
    • 1
  • M. Heuken
    • 1
  • S. Kugler
    • 1
  • K. Heime
    • 1
  • W. Schlapp
    • 2
  • G. Weimann
    • 2
  1. 1.Universität-GH-DuisburgDuisburgGermany
  2. 2.Forschungsinstitut der DBPDarmstadtGermany

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