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Doping in Two Dimensions: The δ-Layer

  • A. Zrenner
  • F. Koch
Part of the NATO ASI Series book series (NSSB, volume 183)

Abstract

Dopant atoms incorporated as a sheet in a single atomic layer during an interruption of molecular-beam-epitaxy growth are shown to provide a novel 2-D system of carriers. We consider the electronic properties of such a δ(z)-function doping layer of Si in GaAs.

Keywords

Gallium Arsenide Tunneling Spectroscopy Subband Energy Solid Phase Epitaxy Single Atomic Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • A. Zrenner
    • 1
  • F. Koch
    • 1
  1. 1.Physik-DepartmentTechnische Universität MünchenGarchingFederal Republic of Germany

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