Abstract
The concept of tunneling through a potential barrier lies at the core of quantum mechanics, and its experimental observation is a manifestation of the wave-like behavior of matter. Since the early days of quantum mechanics, tunneling models have been used to explain fundamental experiments such as the ionization of hydrogen by an electric field and the emission of alpha particles by heavy nuclei. The idea of tunneling was also incorporated very soon into solid-state physics, and, thus, was used in 1928 by Fowler and Nordheim to describe field emission from metals, and by Zener in 1,934 to account for internal field emission in semiconductors.
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References
C. B. Duke, “Tunneling in Solids,” Academic Press, New York (1969).
L. L. Chang, L. Esaki, and R. Tsu, Resonant tunneling in semi-conductor double barriers, Appl. Phys. Lett., 24: 593 (1974).
See, e. g., D. Böhm, “Quantum Theory,” Prentice-Hall, New York (1951).
K. H. Gundlach, Zur Berechnung des Tunnelstroms durch eine Trapezförmige Potentialstufe, Solid State Electron. 9: 949 (1966).
J. Maserjian, Tunneling in thin MOS structures, J. Vac. Sci. Technol., 11: 996 (1974).
T. W. Hickmott, P. Solomon, R. Fischer, and H. Morkoc, Resonant Fowler-Nordheim tunneling in n¯GaAs-undoped AlxGa1-xAs -n+GaAs capacitors, Appl. Phys. Lett., 44: 90 (1984).
E. O. Kane, Basic concepts of tunneling, in: “Tunneling phenomena in solids,” E. Burstein and S. Lundqvist, ed., Plenum, New York (1969).
B. Ricco, and M. Ya. Azbel, Physics of resonant tunneling. The one-dimensional double-barrier case, Phys. Rev. B, 29: 1970 (1984).
T. C. L. G. Sollner, E. R. Brown, W. D. Goodhue, and H. Q. Le, Observation of millimeter-wave oscillation from resonant tunneling diodes and some theoretical consideration of ultimate frequency limits, Appl. Phys. Lett., 50: 322 (1987).
T. C. L. G. Sollner, W. D. Goodhue, P. E. Tannenwald, C. D. Parker, and D. D.. Peck, Resonant tunneling through quantum wells at frequencies up to 2.5 THz, Appl. Phys. Lett., 43: 588 (1983).
H. Ohnishi, T. Inata, S. Muto, N. Yokoyama, and A. Shibatomi, Self-consistent analysis of resonant tunneling current, Appl. Phys. Lett., 49: 1248 (1986).
E. E. Mendez, W. I. Wang, B. Ricco, and L. Esaki, Resonant tunneling of holes in AlAs-GaAs-AlAs heterostructures, Appl. Phys. Lett., 47: 415 (1985).
E. E. Mendez, E. Calleja, C. E. T. Goncalves da Silva, L. L. Chang, and W. I. Wang, Observation by resonant tunneling of high-energy states in GaAs-Ga-1-xAlxAs quantum wells, Phys. Rev. B, 33: 7368 (1986).
T. H. H. Vuong, D. C. Tsui, and W. T. Tsang, Tunneling in In0.53Ga0.47As-InP double-barrier structures, Appl. Phys. Lett. 50: 212 (1987).
E. E. Mendez, L, Esaki, and W. I. W. ng, Resonant magnetotunneling in GaAlAs-GaAs-GaAlAs heterostructures, Phys. Rev. B, 33: 2893 (1986).
V. J. Goldman, D. C. Tsui, and J. E. Cunningham, Resonant tunneling in magnetic field: evidence for space-charge build-up, Phys. Rev. B, 35:xxxx (1987).
E. E. Mendez, E. Calleja, and W. I. Wang, Tunneling through indirect-gap semiconductor barriers, Phys. Rev. B, 34: 6026 (1986).
E. Finkman, M. D. Sturge, and M. C. Tamargo, X-point excitons in AlAs/GaAs superlattices, Appl. Phys. Lett., 49: 1299 (1986).
E. E. Mendez, W. I. Wang, E. Calleja, and C. E. T. Goncalves da Silva, Resonant tunneling via X-point states in AlAs-GaAs-AlAs heterostructures, Appl. Phys. Lett., 50: 1263 (1987).
I. Hase, H. Kawai, K. Kaneko, and N. Watanabe, Current-voltage characteristics through GaAs/AlGaAs/GaAs heterobarriers grown by metalorganic chemical vapor deposition, J. Appl. Phys., 59: 3792 (1986).
P. M. Solomon, S. L. Wright, and C. Lanza, Perpendicular transport across (Al,Ga)As and the r to X transition, Superlattices and Microstructures, 2: 521 (1986).
A. D. Stone, and P. A. Lee, Effect of inelastic processes on resonant tunneling in one dimension, Phys. Rev. Lett., 54: 1196 (1985).
S. Luryi, Frequency limit of double-barrier resonant-tunneling oscillators, Appl. Phys. Lett., 47: 490 (1985).
H. Morkoc, J. Chen, U. K. Reddy, T. Henderson, and S. Luryi, Observation of a negative differential resistance due to tunneling through a single barrier into a quantum well, Appl. Phys. Lett., 49: 70 (1986).
M. Büttiker, Role of quantum coherence in series resistors, Phys. Rev. B, 33: 3020 (1986).
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© 1987 Plenum Press, New York
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Mendez, E.E. (1987). Physics of Resonant Tunneling in Semiconductors. In: Mendez, E.E., von Klitzing, K. (eds) Physics and Applications of Quantum Wells and Superlattices. NATO ASI Series, vol 170. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5478-9_7
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DOI: https://doi.org/10.1007/978-1-4684-5478-9_7
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