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Physics of Resonant Tunneling in Semiconductors

  • E. E. Mendez
Part of the NATO ASI Series book series (NSSB, volume 170)

Abstract

The concept of tunneling through a potential barrier lies at the core of quantum mechanics, and its experimental observation is a manifestation of the wave-like behavior of matter. Since the early days of quantum mechanics, tunneling models have been used to explain fundamental experiments such as the ionization of hydrogen by an electric field and the emission of alpha particles by heavy nuclei. The idea of tunneling was also incorporated very soon into solid-state physics, and, thus, was used in 1928 by Fowler and Nordheim to describe field emission from metals, and by Zener in 1,934 to account for internal field emission in semiconductors.

Keywords

Landau Level Tunneling Current Resonant Tunneling Tunneling Probability Negative Resistance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • E. E. Mendez
    • 1
  1. 1.IBM Thomas J. Watson Research CenterYorktown HeightsUSA

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