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Molecular Beam Epitaxial Growth and Properties of Hg-Based Microstructures

  • Jean-Pierre Faurie
Part of the NATO ASI Series book series (NSSB, volume 170)

Abstract

This review paper reports on growth by Molecular Beam Epitaxy and characterization of Hg1-xNxTe-CdTe (N = Cd, Mn or Zn) superlattices and Hg1-xCdxTe-HgTe heterojunctions with a special attention to the interdiffusion, the valence band offset between HgTe and CdTe and the Type III to Type I transition in these superlattices.

Keywords

Hole Mobility Cutoff Wavelength CdTe Layer Interface Dipole CdTe Buffer Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • Jean-Pierre Faurie
    • 1
  1. 1.Department of PhysicsUniversity of Illinois at ChicagoChicagoUSA

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