Abstract
In recent years the development of lightwave communication systems has driven an extensive research in the field of opto-electronics. The capability of optical fibers to carry extremely high bit rates, larger than those that electronic can handle, has raised a lot of attention into optical signal processing. Optics is well suited for parallel processing, hence permitting high throughout, and a number of optical processes in condensed matter have a very fast response time. Therefore it is predictable that optical switching elements are going to become important components in future information processing systems. These devices are based upon the possibility to induce large changes in the refractive index, n, or in the absorption coefficient, α, of some medium. The rational behind this statement goes as follow. When an optical field E ω propagates through a length 1 of matter it experiences a phase change ϕ = (2πn /λ +iα/2)xl thus an external perturbation can be used for switching this field if it can causes a phase change of the order of Re(Δϕ) ≈π or Im(Δϕ)′≈1. Ideally one would like to dispose of media in which large and fast changes Δn or Δα can be induced with low energy. Furthermore it is also desirable for these media to be robust, to have good optical quality and to be compatible with other electronic and/or optical technologies they must interface. All these requirements point obviously toward semiconductor based materials.
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Chemla, D.S. (1987). Opto-Electronics in Semiconductors Quantum Wells Structures: Physics and Applications. In: Mendez, E.E., von Klitzing, K. (eds) Physics and Applications of Quantum Wells and Superlattices. NATO ASI Series, vol 170. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5478-9_19
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