Novel Tunnelling Structures: Physics and Device Implications

  • M J Kelly
  • R A Davies
  • N R Couch
  • B Movaghar
  • T M Kerr
Part of the NATO ASI Series book series (NSSB, volume 170)


The new crystal growth techniques (molecular beam epitaxy and metal-organic chemical vapour deposition) allow sufficient control over the layer thicknesses and integrity that resonant tunnelling phenomena can be explored with some precision. Beyond the double barrier diode and the uniform superlattice are a number of novel tunnelling structures, the physics of two of which, the superlattice tunnel diode and the short graded-parameter superlattice, will be discussed in some detail. A short discussion will also be given of the potential role of tunnelling in both two and three terminal devices.


Resonant Tunnelling Negative Differential Resistance Tunnel Barrier Tunnelling Structure Negative Differential Conductance 
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Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • M J Kelly
    • 1
  • R A Davies
    • 1
  • N R Couch
    • 1
  • B Movaghar
    • 1
  • T M Kerr
    • 1
  1. 1.GEC Research Limited Hirst Research CentreWembleyUK

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