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Novel Tunnelling Structures: Physics and Device Implications

  • M J Kelly
  • R A Davies
  • N R Couch
  • B Movaghar
  • T M Kerr
Part of the NATO ASI Series book series (NSSB, volume 170)

Abstract

The new crystal growth techniques (molecular beam epitaxy and metal-organic chemical vapour deposition) allow sufficient control over the layer thicknesses and integrity that resonant tunnelling phenomena can be explored with some precision. Beyond the double barrier diode and the uniform superlattice are a number of novel tunnelling structures, the physics of two of which, the superlattice tunnel diode and the short graded-parameter superlattice, will be discussed in some detail. A short discussion will also be given of the potential role of tunnelling in both two and three terminal devices.

Keywords

Resonant Tunnelling Negative Differential Resistance Tunnel Barrier Tunnelling Structure Negative Differential Conductance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    R A Davies, M J Kelly and T M Kerr, “Tunnelling between two strongly coupled superlattices”, Phys. Rev. Lett. 55, 1114–6 (1985)ADSCrossRefGoogle Scholar
  2. 2.
    R A Davies, M J Kelly and T M Kerr, “Room Temperature Oscillation in a Superlattice Structure”, Electronics Lett, 22, 121–3 (1986)CrossRefGoogle Scholar
  3. 3.
    R A Davies, M J Kelly and T M Kerr “Tailoring the I-V Characteristics of a Superlattice Tunnel diode”, Electronics Letts. 23, 90–2, (1987)CrossRefGoogle Scholar
  4. 4.
    N R Couch, M J Kelly, T M Kerr, E Britton and W M Stobbs “Evidence for the Role of Indirect Gap Tunnelling through Thin AlAs Barriers”, Semiconductor Science and Technology 2, 244–7 (1987)Google Scholar
  5. 5.
    N R Couch, D G Parker, M J Kelly and T M Kerr “Low Dark-current GaAs/AlAs Graded-Parameter Superlattice PIN Photodetector”, Electronics Letts. 22, 636–7, (1986)ADSCrossRefGoogle Scholar
  6. 6.
    D G Parker, N R Couch, M J Kelly and T M Kerr “On the High-Speed Photoresponse of a Quasi-Graded Band-Gap Superlattice p-i-n Photodiode”, Appl. Phys. Letts, 49, 939–41, (1986)ADSCrossRefGoogle Scholar
  7. 7.
    T Kakagawa, N J Kawai, K Ohta and N Kawashima “New Negative-Resistance Device by a CHIRP Superlattice”, Electronics Letts 19, 822–3 (1983)ADSCrossRefGoogle Scholar
  8. 8.
    T Nakagawa, H Imamoto, T Sakamoto, T Kojima, K Ohta and N J Kawai, “Observation of Negative Differential Resistance in CHIRP Superlattices”, Electronics Letts 21, 882–4 (1985)CrossRefGoogle Scholar
  9. 9.
    N Yokoyama, K Imamura, S Muto, S Hiyamizu and H Nishi “A New Functional Resonant Tunnelling Hot Electron Transistor (RHET)” Jap. J. Appl. Phys., Part 2, 24 L853–4 (1985)Google Scholar
  10. 10.
    N Yokoyama and K Imamura “Flip-Flop Circuit Using a Resonant-Tunnelling Hot Electron Transistor (RHET)”, Electronics Lett, 22, 1228–9 (1986)Google Scholar
  11. 11.
    F Capasso, S Sen, A C Gossard, A L Hutchinson and J H English, “Quantum-Well Resonant Tunnelling Bipolar Transistor Operating at Room Temperature”, IEEE Electron Devices Lett. EDL 7, 573–6, (1986)CrossRefGoogle Scholar
  12. 12.
    J F Palmier, C Minot, J L Lievin, F Alexandre, J C Hamand, J Dangla, C Dubon-Chevallier and D Ankri, “Observation of Bloch Conduction Perpendicular to Interfaces on a Superlattice Bipolar Transistor”, Appl. Phys. Lett 49, 1260–2, (1986)ADSCrossRefGoogle Scholar
  13. 13.
    See accompanying chapter M J Kelly, A P Long and P H Beton, “Hot Electron Spectroscopy and Transistor Design”,Google Scholar
  14. 14.
    F Capasso, K Mohammed and A Y Cho “Resonant Tunnelling through Double Barriers, Perpendicular Quantum Transport Phenomen in Superlattices, and their Device Applications”, IEEE Quantum Electronics QE-22, 1853–69, (1986)Google Scholar
  15. 15.
    B Movaghar “Theory of High-field Transport in Semiconductor Superlattice structures”, Semiconductor Science and Technology 2 185–206 (1987)Google Scholar
  16. 16.
    L Esaki and L L Chang, “New Transport Phenomena in a Semiconductor Superlattice”, Phys. Rev. Lett., 33. 495–7 (1974)ADSCrossRefGoogle Scholar
  17. 17.
    M Saitoh “Stark Ladders in Solids” J. Phys. C5, 914–26 (1972).Google Scholar
  18. 18.
    R T Phillips, N R Couch and M J Kelly “Electroluminesence from a Short Asymmetric GaAs/AlAs Superlattice”, submitted for Semiconductor Science and TechnologyGoogle Scholar
  19. 19.
    S R Andrews and R T Harley “Optically Detected Tunneling Between Quantum Wells”, Proceedings of the SPIE meeting in “Quantum wells and Superlattices’, Marriott Bay, Florida, March 1987.Google Scholar
  20. 20.
    R A Davies, M J Kelly, T M Kerr, C J Hetherington and C J Humphreys, “Geometrical and Electronic Structure of a Semiconductor Superlattice”, Nature 317, 418–9, (1985)ADSCrossRefGoogle Scholar
  21. 21.
    M J Kelly, R A Davies, A P Long, N R Couch, P H Beton and T M Kerr, “Vertical Transport in Multilayer Semiconductor Structures”, Superlattices and Microstructures 2, 313–7, (1986)ADSCrossRefGoogle Scholar
  22. 22.
    R A Davies, D J Newson, T G Powell, M J Kelly and H W Myron, “Magnetotransport in Semiconductor superlattice”, Semiconductor Science and Technolopgy 2, 61–4 (1987)ADSCrossRefGoogle Scholar
  23. 23.
    J C Maan “Combined Electric and Magnetic Field Effects in Semiconductor Heterostructures”, in “Two-Dimensional Systems, Heterostructures and Superlattices”, editors G. Bauer, F Kucher and H Heinrich (Springer-Verlag 1984), p l83–9Google Scholar
  24. 24.
    This is also a factor in the double barrier structures, e. g. M. Tsuchiya, H Sakaki and J Yoshino “Room Temperature Observation of Differential Negative Resistance in an AlAs/GaAs/AlAs Resonant Tunnelling diode”, Jap. J. Applied Phys. 24, L466–8, (1985)Google Scholar
  25. 25.
    C Sotomayer-Torres, private communication and to be publishedGoogle Scholar
  26. 26.
    Courtesy of E Britton, W M Stobbs, C J Hetherington and C J HumphriesGoogle Scholar
  27. 27.
    E R Brown, T C H G Sollner, W D Goodhue and C D Parker, “Millimeter-band Oscillations Based in Resonant Tunnelling in a Double-barrier Diode at Room Temperature”, Appl. Phys. Lett, 50, 83–5 (1987)ADSCrossRefGoogle Scholar
  28. 28.
    c. f. S M Sze “Physics of Semiconductor Devices”, 2nd Electron ( Wiley, New York, 1981 )Google Scholar
  29. 29.
    A P Long, P H Beton and M J Kelly, “Hot Electron Transport in Heavily Doped GaAs”, Semiconductor Science and Technology 1, 63–70, (1986)ADSCrossRefGoogle Scholar
  30. 30.
    N A Cade, S H Parmer, N R Couch and M J Kelly “Indirect Gap Resonant Tunneling in GaAs/AlAs” (to be published)Google Scholar
  31. 31.
    N R Couch, D G Parker, M J Kelly and T M Kerr “Direct and Indirect-Gap Tunnelling in a Graded-Parameter GaAs/AlAs Superlattice” Proceedings of the 18th International Conference on the Physics of Semiconductors, (Stockholm 1986), editor O. Engstrom, (World Science 1987) p 247–50 (Pressure measurements courtesy of P Klipstein)Google Scholar
  32. 32.
    F Singleton, R J Nicholas, N J Pulsford, N R Couch, and M J Kelly “Quasi Bound states in an asymmetric GaAs/AlAs superlattice”, to be published.Google Scholar
  33. 33.
    F Capasso, H M Cox, A L Hutchinson, N Olsson and S G Hummel “Pseudo-quaternany GalnAsP Semiconductors: A New Gao.47Ino.53As/InP Graded Gap Superlattice and its Application to Avalanche Photodiodes”, Appl. Phys. Lett. 45, 1193–5, (1984)Google Scholar
  34. 34.
    T Weil and B Vinter “Calculation of Carrier Transport in Pseudo-Quaternary Alloys”, Surf. Sci., 174, 505–8 (1986)Google Scholar
  35. 35.
    T Nakagawa, H Imamoto, T Kojima and K Ohta “Observation of Resonant Tunnelling in AlGaAs/GaAs Triple Barrier Diodes”, Appl. Phys. Lett. 49, 73–5 (1986)Google Scholar
  36. 36.
    M A Reed, J W Lee and H. L. Tsai., “Resonant Tunnelling Through in Double GaAs/AlAs Superlattice Barrier, Single Quantum Well Heterostructure”, Appl. Phys. Lett., 49, 158–60 (1986)Google Scholar
  37. 37.
    S Muto, “Transport Characteristic in Heterostructure Devices” in the Proceedings of “High Speed Electronics” (Copenhagen), editors B Kallback and H Beneking (Springer-Verlag 1986 )Google Scholar
  38. 38.
    R A Davies, “Simulations of the Current-Voltage Characteristics of Semiconductor Tunnel Structure”, GEC Journal of Research, 1987, to appearGoogle Scholar
  39. 39.
    A R Bonnefoi, T C McGill, R D Burnham and G B Anderson., “Observation of Resonant Tunnelling through GaAs Quantum Well States Confined by AlAs X-point Barriers”, Appl. Phys. Lett 50, 344–6, (1987), and see reference 4 therein.Google Scholar
  40. 40.
    J M Gering, D A Crim, D G Morgan, P D Coleman, W Kopp and H Morkoc “A Small-Signal Equivalent-Circuit Model for GaAs-AlxGai-xAs Resonant Tunneling Heterostructures and Microwave Frequencies”, J. Appl. Phys, 61, 271–6 (1987)ADSCrossRefGoogle Scholar
  41. 41.
    S Luryi “Hot-Electron-Injection and Resonant-Tunneling Heterojunction Devices” to appear in “Heterojunctions: A Modern View of Band Discontinuities and Device Applications” editors F Capasso and G Margaritondo (North Holland 1987, to appear)Google Scholar

Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • M J Kelly
    • 1
  • R A Davies
    • 1
  • N R Couch
    • 1
  • B Movaghar
    • 1
  • T M Kerr
    • 1
  1. 1.GEC Research Limited Hirst Research CentreWembleyUK

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