Hot-Electron Spectroscopy and Transistor Design
The generation of hot electrons and their relaxation over short distances has been investigated in multilayer semiconductor structures. Scattering due to electron-electron interactions has been identified as the principal reason why hot-electron transistors have so far failed to give adequate current gain. Novel structures have been designed to circumvent this interaction in different ways, leading to the observation of ballistic transport and viable hot-electron transistors.
KeywordsBallistic Transport Heterojunction Bipolar Transistor Tunnelling Injector High Speed Device Emitter Barrier
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- 1.For an introducton see: S Luryi, “Hot-Electron-Injection and Resonant-Tunnelling Heterojunction Devices”, in “Heterojunctions: a Modern View of Band Discontinuities and Device Applications”, (editors F. Capasso and G. Margaritondo) (North Holland 1987 )Google Scholar
- 2.J R Hayes and A F J Levi, “Dynamics of Extreme Nonequilbrium Electron transport in GaAs’, IEEE Journal of Quantum Electronics, QE-22, 1744–52 (1986), and references thereinGoogle Scholar
- 7.N Yokoyama, K Imamura, S Muto, S Hiyamizu and H Nishi, “A New Functional Resonant Tunnelling Hot Electron Transistor (RHET)”, Jap. J. Appl. Phys. 24, Part 2, L853–4 (1985)Google Scholar
- 8.A P Long, P H Beton, M J Kelly and T M Kerr, “Hot-electron Injection by Graded AlxGa1-xAs” Electronics Letters, 22, 130–1, (1986)Google Scholar
- 10.L F Eastman “The Limits of Electron Ballistic Motion in Compound Semiconductor Transistors”, in Gallium Arsenide and Related Compounds 1981 (Inst. Phys. Conf. Ser. No. 63) p245–50Google Scholar
- 11.M A Hoi lis, S C Palmateer, L F Eastman, N V Dundekar and P M Smith, “Importance of Electron Scattering with Coupled Plasmon-Optical Phonon Modes in GaAs Planar-Doped Barrier Transistors”, IEEE Electron Device Letters, EDL-4, 440–3 (1987)Google Scholar
- 14.P H Beton, A P Long and M J Kelly, “Hot Electron Transport in GaAs in the Presence of a Magnetic field”, to be published.Google Scholar
- 19.A F J Levi, J R Hayes and R Bhat “ ‘Ballistic’ Injection Devices in Semiconductors”, Applied Phys. Letts. 48, 1609–11 (1986)Google Scholar
- 22.A P Long, P H Beton and M J Kelly, “Hot Electron Transport in In0.53Ga0.47As”, to be publishedGoogle Scholar
- 23.C Y Chang, W C Liu, M S Jame, Y M Wang, S Luryi and S M Sze, “Induced Base Transistor Fabricated by Molecular Beam Epitoxy” IEEE Electron Device Letters, EDL-7 497–499, (1986)Google Scholar