Hot-Electron Spectroscopy and Transistor Design

  • M J Kelly
  • A P Long
  • P H Beton
  • T M Kerr
Part of the NATO ASI Series book series (NSSB, volume 170)


The generation of hot electrons and their relaxation over short distances has been investigated in multilayer semiconductor structures. Scattering due to electron-electron interactions has been identified as the principal reason why hot-electron transistors have so far failed to give adequate current gain. Novel structures have been designed to circumvent this interaction in different ways, leading to the observation of ballistic transport and viable hot-electron transistors.


Ballistic Transport Heterojunction Bipolar Transistor Tunnelling Injector High Speed Device Emitter Barrier 
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Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • M J Kelly
    • 1
  • A P Long
    • 1
  • P H Beton
    • 1
  • T M Kerr
    • 1
  1. 1.GEC Research Limited Hirst Research CentreWembleyUK

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