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Raman Spectroscopy for the Study of Semiconductor Heterostructures and Superlattices

  • Gerhard Abstreiter
Part of the NATO ASI Series book series (NSSB, volume 170)

Abstract

Inelastic light scattering has been used widely to investigate numerous properties of bulk semiconductors, thin films, surfaces, interfaces, and superlattices. There exist many excellent review articles in the literature. The interested reader can find most of the recent developments in this field in special volumes on “Light scattering in solids” of the series “Topics in applied physics”.1 The present article can only scratch the surface of various applications of Raman spectroscopy for the investigation of semiconductor structures. It is neither intended to discuss all details nor to cover all interesting recent publications. We concentrate on GaAs and Si/Ge related structures. The paper is organized in the following way: Special aspects of allowed phonon scattering which give information on composition and strain of thin semiconducting films are discussed first. It is followed by a short overview of phonon properties of superlattices. The information of heterostructures as studied by forbidden LO-phonon scattering is described next. We close with a discussion of inelastic light scattering by free carriers, with special emphasis put on two-dimensional carrier systems.

Keywords

Raman Spectroscopy Barrier Height Optical Phonon Thin Semiconducting Film Strain Layer Superlattice 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • Gerhard Abstreiter
    • 1
  1. 1.Physik-DepartmentTechnische Universität MünchenGarchingGermany

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