Raman Spectroscopy for the Study of Semiconductor Heterostructures and Superlattices

  • Gerhard Abstreiter
Part of the NATO ASI Series book series (NSSB, volume 170)


Inelastic light scattering has been used widely to investigate numerous properties of bulk semiconductors, thin films, surfaces, interfaces, and superlattices. There exist many excellent review articles in the literature. The interested reader can find most of the recent developments in this field in special volumes on “Light scattering in solids” of the series “Topics in applied physics”.1 The present article can only scratch the surface of various applications of Raman spectroscopy for the investigation of semiconductor structures. It is neither intended to discuss all details nor to cover all interesting recent publications. We concentrate on GaAs and Si/Ge related structures. The paper is organized in the following way: Special aspects of allowed phonon scattering which give information on composition and strain of thin semiconducting films are discussed first. It is followed by a short overview of phonon properties of superlattices. The information of heterostructures as studied by forbidden LO-phonon scattering is described next. We close with a discussion of inelastic light scattering by free carriers, with special emphasis put on two-dimensional carrier systems.


Raman Spectroscopy Barrier Height Optical Phonon Thin Semiconducting Film Strain Layer Superlattice 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Topics in Applied Physics” Vols.8, 50 and 54, “Light Scattering in Solids”, M.Cardona and G. Güntherodt, Springer Verlag, Berlin HeidelbergGoogle Scholar
  2. 2.
    G.Abstreiter, E.Bauser, A.Fischer, and K.Ploog, Appl. Phys. 16, 345 (1978)ADSCrossRefGoogle Scholar
  3. 3.
    G.Abstreiter, H.Brugger, T.Wolf, H.Jorke, and H. J. Herzog, Phys.Rev.Lett. 54, 2441 (1985)ADSCrossRefGoogle Scholar
  4. 4.
    G.Abstreiter and H.Brugger, Proc. of the 18th Int. Con. on the Physics of Semiconductors, Stockholm 1986, O.Engström (ed.), World Scientific, Singapore 1987, Vol. 1, p. 739Google Scholar
  5. 5.
    F.Cerdeira, A.Pinczuk, J.C.Bean, B.Batlogg, and B.A.Wilson, Appl.Phys.Lett. 45, 1138 (1984)Google Scholar
  6. 6.
    S.M.Rytov, Akust. Zh.2, 71 (1956) (Sov.Phys.Acoust, 2, 68 (1956))Google Scholar
  7. 7.
    C.Colvard, R.Merlin, M.V.Klein, and A.C.Gossard, Phys.Rev.Lett. 45, 298 (1980)Google Scholar
  8. 8.
    J.Sapriel, J.C.Michel, J.C.Tol6dano, R.Vacher, J.Kervarec and A.Regrany, Phys.Rev. B28, 2007 (1983)Google Scholar
  9. 9.
    C.Colvard, T.A.Gant, M.V.Klein, R.Merlin, R.Fischer, H.Morkov, and A.C.Gossard, Phys.Rev. B31, 2080 (1985)Google Scholar
  10. 10.
    H.Brugger, G.Abstreiter, H.Jorke, H.J.Herzog, and E.Kasper, Phys.Rev. 33, 5928 (1986)ADSCrossRefGoogle Scholar
  11. 11.
    S.Venagopalan, L.A.Kolodziejski, R.L.Gunshor, and A.K.Ramdas, Appl.Phys.Lett. 45, 974 (1984)Google Scholar
  12. 12.
    H.Brugger, H.Reiner, G.Abstreiter, H.Jorke, H.J. Herzog, and E.Kasper, Superlattices and Microstructures 2, 451 (1986)Google Scholar
  13. 13.
    B.Jusserand, D.Paquet, and A.Regreny, Phys.Rev. B30, 6245 (1984)ADSCrossRefGoogle Scholar
  14. 14.
    A.K.Sood, J.Menendez, M.Cardona, and K.Ploog, Phys.Rev.Lett. 54, 2111 (1985)ADSCrossRefGoogle Scholar
  15. 15.
    A. K. Sood, J. Menendez, M. Cardona, and K.Ploog, Phys.Rev.Lett. 54, 2115 (1985) and Phys.Rev. B32, 1412 (1985)Google Scholar
  16. 16.
    E. Molinari, A.Fasolino, and K.Kunc, Phys.Rev.Lett. 56, 1751 (c) (1986); B.Jusserand and D.Paquet, ibid., 1752 (c); A.K.Sood, M. Cardona, and K.Ploog, ibid., 1753 (c)Google Scholar
  17. 17.
    J.Zucker, A.Pinczuk, D.S.Chemla, A.Gossard, and W.Wiegmann, Phys.Rev.Lett. 53., 1280 (1984)Google Scholar
  18. 18.
    B. Jusserand and D.Paquet, in “Heterojunctions and Semiconductor Superlattices”, Proceedings of the Winterschool, Les Houches, France 1985, G.Allan, G.Bastard, N.Boccara, M.Lannoo, and M.Voos (eds.), Springer Verlag, Berlin Heidelberg, p. 108Google Scholar
  19. 19.
    F. Schäffler and G.Abstreiter, J.Vac.Sci.Technol. B3, 1184 (1985)Google Scholar
  20. 20.
    H.Brugger, F.Schäffler, and G.Abstreiter, Phys.Rev.Lett. 52, 141 (1984)ADSCrossRefGoogle Scholar
  21. 21.
    G. Abstreiter, in Festkörperprobleme (Advances in Solid State Physics), Vol.XXIV, p.291, and Vol.26, p.41, P.Grosse (ed), Vieweg Braunschweig, 1984 and 1986Google Scholar
  22. 22.
    F. Schäffler and G.Abstreiter. Phys.Rev. B34, 4017 (1986)CrossRefGoogle Scholar
  23. 23.
    H. Brugger, doctoral thesis, TU München 1987Google Scholar
  24. 24.
    H.Brugger and G.Abstreiter in Proc. of the 3rd Int.Conf. on Modulated Semiconductor Stuctures, Montpellier France, 1987 (to be published)Google Scholar
  25. 25.
    A. Mooradian, in Festkörperprobleme (Advances in Solid State Physics), Vol IX, p.74, O.Madelung (ed.) Vieweg Braunschweig, 1969Google Scholar
  26. 26.
    M.V.Klein, in Ref. l, Vol 8, p. 147 (1975)Google Scholar
  27. 27.
    G. Abstreiter, M.Cardona, and A.Pinczuk in Ref. l, Vol 54, p. 5 (1984)Google Scholar
  28. 28.
    A.Pinczuk, G.Abstreiter, R.Trommer, and M.Cardona, Solid State Commun. 30, 429 (1979)ADSCrossRefGoogle Scholar
  29. 29.
    E.Burstein, A.Pinczuk, and S.Buchner, in Physics of Semiconductors, ed. B.L.Wilson (The Institute of Physics, Bristol, London, 1979 ) p. 585Google Scholar
  30. 30.
    E.Burstein, A.Pinczuk, and D.L.Mills, Surf.Sci. 98, 451 (1980)ADSCrossRefGoogle Scholar
  31. 31.
    G.Abstreiter and K.Ploog, Phys.Rev.Lett. 42, 1308 (1979)ADSCrossRefGoogle Scholar
  32. 32.
    A.Pinczuk, H.L.Stormer, R.Dingle f J.M.Worlock, W.Wiegmann, and A.C.Gossard, Solid State Commun. 32, 1001 (1979)Google Scholar
  33. 33.
    G.Abstreiter, R. Merlin, and A.Pinczuk, JEEE QE22, 1771 (1986)Google Scholar
  34. 34.
    A.Pinczuk and J.M.Worlock, Surf.Sci. 113, 69 (1982)ADSCrossRefGoogle Scholar
  35. 35.
    G.Abstreiter, in Molecular Beam Epitaxy and Heterostructures. L.L.Chang and K.Ploog (eds), Dordrecht, The Netherlands Nijoff 1985, p.425; see also Ref. 18, p. 99Google Scholar
  36. 36.
    D.Olego, A.Pinczuk, A.C.Gossard, and W.Wiegmann, Phys.Rev. B25, 7867 (1982)Google Scholar
  37. 37.
    G.Fasol, N.Mestres, A.Fischer, and K.Ploog, in Ref. 4, p. 679Google Scholar
  38. 38.
    A.Pinczuk, M.G.Lamont, and A.C.Gossard, Phys.Rev.Lett.56., 2092 (1986)Google Scholar

Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • Gerhard Abstreiter
    • 1
  1. 1.Physik-DepartmentTechnische Universität MünchenGarchingGermany

Personalised recommendations