Novel Non-Destructive X-Ray Technique for Near-Real Time Defect Mapping
A novel x-ray technique is presented which offers the capability for near-real time defect mapping in a variety of electronic materials. The method relies on a recently developed computer controlled x-ray rocking curve analyzer which utilizes localized x-ray line broadening as a means of quantifying the local dislocation density. By the use of electronic x-ray detectors and image processing techniques, a high quality image of the defect distribution can be produced in a fraction of the time required for conventional x-ray topographs. Moreover, the system requires minimum operator intervention due to its microprocessor control, thus making it ideal as a powerful nondestructive tool for both QC and research applications. The operating principle of the system will be presented along with application to the study of defect distributions in a variety of substrate materials and epitaxial thin films. The primary focus of the discussion will be on III-V and II-VI epitaxial films grown by LPE technique. Among the materials to be reported are HgCdTe on CdTe, AlGaAs on GaAs, GaAs and PbSe on BaF2.
KeywordsEpitaxial Film Defect Distribution Epitaxial Thin Film Local Dislocation Density Double Crystal Diffractometer
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