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Evaluation of Surface Layer Residual Stresses and Lattice Distortions in Ion Implanted Materials by X-Ray Diffraction

  • E. D. Roll
  • R. N. Pangborn
  • M. F. Amateau

Abstract

Shallow incidence X-ray diffraction techniques were employed to investigate the effects of ion implantation in metallic and ceramic materials. In the initial study, X-ray rocking curve profiles were used to evaluate the lattice distortion introduced by implantation of lithium in aluminum single crystals. By preparing asymmetrically cut crystals such that the diffraction condition ranged from glancing incidence to symmetric reflection, a depth profile of the implantation damage could be constructed. In this way, the damage associated with multiple implantations at two different fluences could be compared. In a subsequent investigation, low order diffraction peaks obtained using Cr Ka radiation have also been monitored for the purpose of estimating the residual stress and lattice disorder imposed by implantation of argon in alumina and silicon carbide. The maximum and average compressive stresses in the surface layer of the specimens, implanted at various energies and fluence, were evaluated and correlated with theoretical depth profiles of the implantation damage.

Keywords

Residual Stress Silicon Carbide Integral Breadth Aluminum Single Crystal Average Compressive Stress 
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References

  1. 1.
    X-Ray Studies on Mechanical Behavior of Materials, S. Taira, ed., The Society of Materials Science, Japan, 309 p. (1974).Google Scholar
  2. 2.
    S. Weissmann, “The Application of X-ray Topography to Materials Science,” in Nondestructive Evaluation of Materials, J. J. Burke and V. Weiss, eds., Plenum Publ. Corp., 69 (1979).CrossRefGoogle Scholar
  3. 3.
    R. W. James, The Optical Principles of the Diffraction of X-Rays, G. Bell and Sons, Ltd., London (1950).Google Scholar
  4. 4.
    A. D. Kurtz, S. A. Kulin and B. L. Averbach, “Effect of Dislocations on the Minority Carrier Lifetime in Semiconductors,” Phys. Rev. 101, 4, 1285 (1956).CrossRefGoogle Scholar
  5. 5.
    I. Manning and G. P. Mueller, “Depth Distribution of Energy Deposition by Ion Bombardment,” Comp. Phys. Comm. 7, 85 (1974).CrossRefGoogle Scholar
  6. 6.
    M. T. Robinson and O. S. Oen, “On the Use of Thresholds in Damage Energy Calculations,” J. of Nuc. Mater. 102/104, 1315 (1981).Google Scholar
  7. 7.
    T. F. Page and P. J. Burnett, “Criteria for Mechanical Property Modification of Ceramic Surfaces by Ion Implantation,” in Proc. Int. Conf. Radiation Effects in Insulators, Guilford, UK, July (1985).Google Scholar
  8. 8.
    C.J. McHargue, Oak Ridge National Laboratory, Personal Communication referenced in M.S. Thesis by S. R. Zimmerman, The Pennsylvania State University, August (1986).Google Scholar
  9. 9.
    J. M. Williams, C. J. McHargue and B. R. Appleton, “Structural Alterations in SiC as a Result of C+ and N+ Implantation,”- Nuc. Inst. and Meth. 209/210, 317 (1983).CrossRefGoogle Scholar
  10. 10.
    G. Arlt and G. R. Schodder, “Antiresonance of Conducting Piezoelectric Resonators,” Acoust. Soc. of Amer. 37, 151 (1965).CrossRefGoogle Scholar
  11. 11.
    R. F. S. Hearmon, “The Elastic Constants of Anisotropic Materials II,” Adv. Phys. 5, 323 (1956).CrossRefGoogle Scholar
  12. 12.
    G. B. Krefft and E. P. Eernisse, “Volume Expansion and Annealing Compaction of Ion Bombarded Single-Crystal and Polycrystalline α-Al2O3,” J. Appl. Phys. 49, 2725 (1978).CrossRefGoogle Scholar
  13. 13.
    T. F. Page and P. J. Burnett, “Modifying the Tribological Properties of Ceramics by Ion Implanting,” Proc. Brittish Ceramic Soc. 34, 65 (1984).Google Scholar
  14. 14.
    R. Yazici, W. Mayo, T. Takemoto and S. Weissmann, “Defect Structure Analysis of Polycrystalline Materials by Computer-Controlled Double-Crystal Diffractometer with Position-Sensitive Detector,” J. Appl. Cryst. 16, 89 (1983).CrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • E. D. Roll
    • 1
  • R. N. Pangborn
    • 1
  • M. F. Amateau
    • 1
  1. 1.Department of Engineering Science and MechanicsThe Pennsylvania State UniversityUniversity ParkUSA

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