Evaluation of Surface Layer Residual Stresses and Lattice Distortions in Ion Implanted Materials by X-Ray Diffraction
Shallow incidence X-ray diffraction techniques were employed to investigate the effects of ion implantation in metallic and ceramic materials. In the initial study, X-ray rocking curve profiles were used to evaluate the lattice distortion introduced by implantation of lithium in aluminum single crystals. By preparing asymmetrically cut crystals such that the diffraction condition ranged from glancing incidence to symmetric reflection, a depth profile of the implantation damage could be constructed. In this way, the damage associated with multiple implantations at two different fluences could be compared. In a subsequent investigation, low order diffraction peaks obtained using Cr Ka radiation have also been monitored for the purpose of estimating the residual stress and lattice disorder imposed by implantation of argon in alumina and silicon carbide. The maximum and average compressive stresses in the surface layer of the specimens, implanted at various energies and fluence, were evaluated and correlated with theoretical depth profiles of the implantation damage.
KeywordsResidual Stress Silicon Carbide Integral Breadth Aluminum Single Crystal Average Compressive Stress
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