Advertisement

Silicide Contact and Gate in Microelectronic Devices

  • K. N. Tu
Part of the The IBM Research Symposia Series book series (IRSS)

Abstract

A brief review about silicide metallization technology, i.e. the use of transition metal silicides as contacts and gates in large scale integrated silicon devices is presented and a short discussion about the low temperature redistribution of dopant induced by a moving silicidesilicon interface is included.

Keywords

Schottky Barrier Refractory Metal Schottky Barrier Height Microelectronic Device Silicide Formation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    K.N. Tu, W.N. Hammer and J.O. Olowolafe, J. Appl. Phys. 51, 1663 (1980).CrossRefGoogle Scholar
  2. 2.
    K.N. Tu, J. Vac. Sci. Technol. 19, 766 (1981).Google Scholar
  3. 3.
    B.L. Crowder and S. Zirinsky, IEEE Trans. Electronic Devices, ED26, 369 (1979).Google Scholar
  4. 4.
    S.P. Murarka, J. Vac. Sci. Technol. 17, 775 (1980).Google Scholar
  5. 5.
    A.K. Sinha, J. Vac. Sci. Technol. 19, 778 (1981).Google Scholar
  6. 6.
    C.M. Osburn, M.Y. Tsai, S. Roberts, C.L. Luchese and C.Y. Ting Proceedings of ECS meeting (1982).Google Scholar
  7. 7.
    C.Y. Ting, S.S. Iyer, C.M. Osburn, G.J. Hu and A.M. Schweig-hart, Proceedings of ECS Meeting (1982).Google Scholar
  8. 8.
    K.N. Tu and J.W. Mayer, in “Thin Films — Interdiffusion and Reactions” edited by J.M. Poate, K.N. Tu and J.W. Mayer, WileyInterscience, New York (1978).Google Scholar
  9. 9.
    H. Föll, P.S. Ho and K.N. Tu, Phil. Mag. 45, 31 (1982).Google Scholar
  10. 10.
    K.N. Tu, E.I. Alessandrini, W.K. Chu, H. Krautle and J.W. Mayer, Japan J. of Appl. Phys., Supplement 2, Part. 1, page 669 (1974).Google Scholar
  11. 11.
    K.N. Tu, R.D. Thompson and B.Y. Tsaur, Appl. Phys. Lett. 38, 626 (1981).CrossRefGoogle Scholar
  12. 12.
    G. Ottaviani, K.N. Tu and J.W. Mayer, Phys. Rev. B 24, 3354 (1981).CrossRefGoogle Scholar
  13. 13.
    L.S. Darken and R.W. Gurry, “Physical Chemistry of Metals, McGraw-Hill, New York (1953).Google Scholar
  14. 14.
    J.O. Olowolafe, K.N. Tu and J. Angilello, J. Appl. Phys. 50, 6316 (1979).CrossRefGoogle Scholar
  15. 15.
    M. Eizenberg and K.N. Tu, J. Appl. Phys. 53, 1577 (1982).CrossRefGoogle Scholar
  16. 16.
    S. Kritzinger and K.N. Tu, J. Appl. Phys. 52, 305 (1981).CrossRefGoogle Scholar
  17. 17.
    M. Eizenberg, H. Föll and K.N. Tu, J. Appl. Phys., 52, 861 (1981).CrossRefGoogle Scholar
  18. 18.
    I. Ohdomari and K.N. Tu, J. Appl. Phys. 51, 3735 (1980).CrossRefGoogle Scholar
  19. 19.
    R. Thompson and K.N. Tu, J. Appl. Phys. 53 4285 (1982).CrossRefGoogle Scholar
  20. 20.
    T. Okumura and K.N. Tu, J. Appl. Phys. (submitted).Google Scholar
  21. 21.
    M. Wittmer and T.E. Seidel, J. Appl. Phys. 49, 5827 (1978).CrossRefGoogle Scholar
  22. 22.
    I. Ohdomari, K.N. Tu, K. Sugaro, M. Akiyama, I. Kimura and K. Yoneda, Appl. Phys. Lett. 38, 1015 (1981).CrossRefGoogle Scholar
  23. 23.
    I. Ohdomari, K. Sugaro, M. Akiyama, T. Maeda, K.N. Tu, I. Kimura and K. Yoneda, Thin Solid Films 89, 349 (1982).CrossRefGoogle Scholar
  24. 24.
    M. Wittmer, C.Y. Ting, I. Ohdomari and K.N. Tu, J. Appl. Phys. (in press).Google Scholar
  25. 25.
    M. Wittmer, C.Y. Ting and K.N. Tu, J. Appl. Phys. (submitted).Google Scholar

Copyright information

© Plenum Press, New York 1984

Authors and Affiliations

  • K. N. Tu
    • 1
  1. 1.IBM T.J. Watson Research CenterYorktown HeightsUSA

Personalised recommendations