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Abstract

Native oxides readily grow on the III-V compounds and can form very thick layers. They also often appear at deposited insulator/III-V interfaces where they can strongly affect the electrical properties. The native oxides can be used to seal or passivate the III-V surface or serve as an insulating layer. This chapter provides insight into the mechamisms of oxide growth and how the oxide/III-V interface is formed. Unfortunately, the growth of oxides on the III-Vs is far more complex than on Si. This is caused by a “competition” between the two or more elements of the III-V substrate, for example, one element may diffuse, evaporate, or dissolve faster than the other. Thus, the chemical composition of bulk oxide layer or its interface may be highly nonuniform.

Keywords

Oxide Layer Thin Solid Film Thermal Oxidation Anodic Oxide Oxide Thickness 
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Copyright information

© Plenum Press, New York 1985

Authors and Affiliations

  • C. W. Wilmsen
    • 1
  1. 1.Department of Electrical EngineeringColorado State UniversityFort CollinsUSA

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