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Interfacial Constraints on III-V Compound MIS Devices

  • Derek L. Lile

Abstract

The first proposed structure for an active semiconductor device appeared in 1930(1) and consisted of a three-terminal element where current control was exercised by means of a metal-semiconductor barrier. This device and a subsequently modified structure employing an aluminum oxide dielectric spacer(2) were unsuccessful because of an inability at that time to prepare an electrically suitable surface. Interestingly, both these devices were proposed using non-Si semiconductors and although they were notable failures initially, they have since, in somewhat modified form, appeared successfully as, what we now call, the Schottky-gate(3) and MOS(4) field-effect transistor, respectively. These devices were not pursued following their initial proposal because of the emergence in 1948 of silicon and germanium junction bipolar transistors(5–7) which, because of their relative ease of fabrication as well as their primary reliance on charge transport remote from a surface, were both fabricated and shown to operate with little developmental delay. Despite their higher-operating-temperature advantage, we now know that Si devices achieved their overwhelming preeminence primarily because of the excellent bulk and interfacial characteristics of silicon’s native thermal oxide, Sio2.(8) The significance of this one fact cannot be overstated when we consider the vast array of devices, circuits, and systems which rely for their operation on the fortuitous circumstance that Si has a good compatible dielectric.

Keywords

Gallium Arsenide Surface Trap Interface State Density Indium Phosphide Surface State Density 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1985

Authors and Affiliations

  • Derek L. Lile
    • 1
  1. 1.Department of Electrical EngineeringColorado State UniversityFort CollinsUSA

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