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Electrical Properties of Insulator-Semiconductor Interfaces on III-V Compounds

  • Chapter
Physics and Chemistry of III-V Compound Semiconductor Interfaces

Abstract

An enormous amount of theoretical and experimental work has been published on metal-insulator-semiconductor (MIS) structures which employ thermally oxidized silicon. The technology of these devices has reached a level of perfection which permits the formation of insulator- semiconductor interfaces in which essentially no extraneous charge-trapping mechanisms are present. The understanding of such structures has reached a level which permits the design and large-scale technological applications of MIS transistors and MIS integrated circuits. Although several other semiconductors appear to be superior to silicon for certain MIS applications, such as microwave logic and signal processing, the understanding of the surface properties of the alternative semiconductors is in a primitive state. The dielectrics that have been tried on such semiconductors always have exhibited larger amounts of charge trapping at the interface and greater frequency dispersion of the electrical properties of the insulator than those attainable on thermally oxidized silicon. In fact, the surface properties are, in many cases, so poor that comparison between experiment and theoretical models developed for silicon can be very difficult and often confusing.

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Authors and Affiliations

  1. Electrical Engineering and Computer Sciences Department, University of California, San Diego, La Jolla, CA, 92093, USA

    L. G. Meiners

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  1. L. G. Meiners
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  1. Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado, 80523, USA

    Carl W. Wilmsen

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© 1985 Plenum Press, New York

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Meiners, L.G. (1985). Electrical Properties of Insulator-Semiconductor Interfaces on III-V Compounds. In: Wilmsen, C.W. (eds) Physics and Chemistry of III-V Compound Semiconductor Interfaces. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-4835-1_4

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  • DOI: https://doi.org/10.1007/978-1-4684-4835-1_4

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-4837-5

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