The Deposited Insulator/III-V Semiconductor Interface

  • J. F. Wager
  • C. W. Wilmsen


The development of a MISFET technology using the III-V compounds requires a gate insulator which is highly resistive, mechanically strong, and electronically stable and which produces a low interface state density. Grown oxides on III-V semiconductors have not yet demonstrated these attributes. For example, arsenic and phosphorus oxides rapidly absorb water from the atmosphere and arsenic oxides are thermodynamically unstable in the presence of GaAs, InAs, or InGaAs. The failure of the grown oxides to provide a suitable gate insulator dictates the use of deposited insulators. The use of a deposited insulator is, however, a compromise at best since the uniformity, thickness, and properties of a deposited insulator cannot be controlled as well as with a grown oxide. Also, the heteromorphic nature of the deposited insulator/III-V interface implies the possibility of a nonabrupt interfacial mismatch and its associated trap states. Thus, deposited insulators have inherent bulk and interface problems which require special attention.


Native Oxide GaAs Surface Interface State Density Semiconductor Interface Indium Antimonide 


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Copyright information

© Plenum Press, New York 1985

Authors and Affiliations

  • J. F. Wager
    • 1
    • 2
  • C. W. Wilmsen
    • 1
    • 2
  1. 1.Department of Electrical and Computing EngineeringOregon State UniversityCorvallisUSA
  2. 2.Department of Electrical EngineeringColorado State UniversityFort CollinsUSA

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