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Defect States in Tetrahedral Amorphous Semiconductors

  • J. C. Knights
  • J. Orenstein
  • M. L. Theye

Abstract

The issue of defect states in tetrahedral amorphous semiconductors is addressed from both structural and electronic viewpoints. Extended structural inhomogeneities are identified as the principal structural defects while localized dangling bonds are the principal electronic defects. Correlations between the two in the specific case of a—Si:H are discussed in detail and the issue of the interrelationship between defects and impurities described.

Keywords

Electron Spin Resonance Defect Density Defect State Structural Inhomogeneity Dangling Bond 
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Copyright information

© Springer Science+Business Media New York 1984

Authors and Affiliations

  • J. C. Knights
    • 1
  • J. Orenstein
  • M. L. Theye
  1. 1.Xerox Palo Alto Research CenterPalo AltoUSA

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