Semiconductor lasers with inhomogeneous current injection have been proposed nearly twenty years ago  as highly compact and efficient bistable devices. Recently, we demonstrated that a semiconductor laser with a segmented contact, as shown in Fig. 1, displays bistability without pulsations. The key to the proper design of such a bistable laser is the electrical isolation between the two segments which requires that the parasitic resistance (Rp in Fig. 2) between the two contacts be as large as possible. This can be achieved by doping the top cladding layer only slightly p-type.
KeywordsSemiconductor Laser Current Voltage Characteristic Saturable Absorber Negative Differential Resistance Pump Current
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