Bistable Injection Lasers

  • Ch. Harder
  • K. Y. Lau
  • A. Yariv


Semiconductor lasers with inhomogeneous current injection have been proposed nearly twenty years ago [1] as highly compact and efficient bistable devices. Recently, we demonstrated that a semiconductor laser with a segmented contact, as shown in Fig. 1, displays bistability without pulsations. The key to the proper design of such a bistable laser is the electrical isolation between the two segments which requires that the parasitic resistance (Rp in Fig. 2) between the two contacts be as large as possible. This can be achieved by doping the top cladding layer only slightly p-type.


Semiconductor Laser Current Voltage Characteristic Saturable Absorber Negative Differential Resistance Pump Current 


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  1. [1]
    G. J. Lasher, Solid State Electron., 7:707 (1964).ADSCrossRefGoogle Scholar
  2. [2]
    Ch. Harder, Kam Y. Lau, and Amnon Yariv, IEEE J. Quantum Electronics, 18:1351 (1982).ADSCrossRefGoogle Scholar
  3. [3]
    Ch. Harder, John S. Smith, K.Y. Lau and Amnon Yariv, Appl. Phys. Lett., 42:772 (1983).ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1984

Authors and Affiliations

  • Ch. Harder
    • 1
  • K. Y. Lau
  • A. Yariv
  1. 1.Applied Physics 128-95California Institute of TechnologyPasadenaUSA

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