Nonlinear Refraction and Nonlinear Absorption in InAs
We report here experimental measurements taken with an HF laser of a large nonlinear index of refraction (n2 = 4.5 ± 2.0 × 10-5 cm2/W) and associated nonlinear absorption near the bandgap in InAs between 6°K and 100°K. These results are shown to be consistent with the bandgap resonant model used to explain the nonlinearities seen in InSb and HgCdTe. Furthermore it is shown that an InAs bistable device operating above liquid nitrogen temperatures should be capable of switching with milliwatt power levels.
KeywordsLiquid Nitrogen Temperature Linear Absorption Nonlinear Absorption Saturation Intensity Nonlinear Refraction
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- 9.A.W. Blant-Blachev, L. A. Balagurov, V. V. Karataev, and E. M. Omel’yanowskii, Sov. Phys. Semicond. 9, 515 (1975).Google Scholar