Optical Bistability in Semiconductors

  • C. C. Sung
  • C. M. Bowden


The first demonstrated optical bistability (OB) in a semiconductor was conducted by Gibbs et al.1 in GaAs at low temperature in which the OB is primarily dispersive and the nonlinear index arises from light-induced changes in excitonic absorption. Subsequently, and almost coincident with the first GaAs experiment1 was the work of Miller, Smith and Johnston2 who observed OB in InSb at 5°K due to a direct bandgap resonance mechanism. Quite recently, Gibbs et al. have observed excitonic OB at room temperature in a GaAs-GaAlAs superlattice etalon3.


Dielectric Function Incident Field Mirror Reflectivity Optical Bistability Cavity Mirror 
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Copyright information

© Plenum Press, New York 1984

Authors and Affiliations

  • C. C. Sung
    • 1
  • C. M. Bowden
    • 2
  1. 1.Department of PhysicsUniversity of Alabama in HuntsvilleHuntsvilleUSA
  2. 2.Research Directorate, US Army Missile LaboratoryUS Army Missile CommandRedstone ArsenalUSA

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