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Supersaturated Solid Solution in Ion Implanted Semiconductors

  • Salvatore Ugo Campisano
Part of the NATO Advanced Study Institutes Series book series (NSSB, volume 84)

Abstract

Irradiation of ion implanted semiconductors with high power laser pulse has been used to produce heavily supersaturated solid solutions1,2 . Impurity concentration in excess of 103 times the maximumin equilibrium solubility have been obtained in Si implanted with Te atoms2. Supersaturated solid solutions can be also obtained during thermal annealing of the amorphous surface layer produced by the implantation3. Both processes are characterized by a moving interface separating an ordered phase from a disordered one (liquid during laser and amorphous during thermal annealing). We will show that the basic mechanism leading to the formation of the supersaturated solid solution is the same in both cases, i.e. solute trapping4–6.

Keywords

Supersaturated Solid Solution Ruby Laser Laser Annealing Liquid Silicon Segregation Coefficient 
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Copyright information

© Plenum Press, New York 1983

Authors and Affiliations

  • Salvatore Ugo Campisano
    • 1
  1. 1.Istituto di Struttura della Materia dell’UniversitàCataniaItaly

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