Supersaturated Solid Solution in Ion Implanted Semiconductors
Irradiation of ion implanted semiconductors with high power laser pulse has been used to produce heavily supersaturated solid solutions1,2 . Impurity concentration in excess of 103 times the maximumin equilibrium solubility have been obtained in Si implanted with Te atoms2. Supersaturated solid solutions can be also obtained during thermal annealing of the amorphous surface layer produced by the implantation3. Both processes are characterized by a moving interface separating an ordered phase from a disordered one (liquid during laser and amorphous during thermal annealing). We will show that the basic mechanism leading to the formation of the supersaturated solid solution is the same in both cases, i.e. solute trapping4–6.
KeywordsSupersaturated Solid Solution Ruby Laser Laser Annealing Liquid Silicon Segregation Coefficient
Unable to display preview. Download preview PDF.
- 3.S.U.Campisano,E.Rimini,P.Baeri,G.Foti; Appl.Phys.Lett.(July 1980)Google Scholar
- 4.D.Turnbull; J.de Physique 14 suppl.5 C4,209(1980)Google Scholar
- 5.D.Turnbull; Proceeding of this schoolGoogle Scholar
- 6.S.U.Campisano,G.Foti,P.Baeri,M.G.Grimaldi,E.Rimini; Appl.Phys.Lett. (Oct.1980)Google Scholar