Advertisement

Impurity Clouds in Silicon and Germanium

  • V. P. Kalinushkin
  • V. V. Voronkov
  • G. I. Voronkova
  • V. N. Golovina
  • B. V. Zubov
  • T. M. Murina
  • A. M. Prokhorov
Part of the NATO Advanced Study Institutes Series book series (NSSB, volume 84)

Abstract

Local inhomogeneities in semiconductors (i.e. structural defects and regions of enhanced impurity concentration) can influence crystal properties and device parameters. The influence of structural defects is probably caused by their action as impurity s egregation sites 1,2. Thus the impurity inhomogeneities are the most interesting object of investigation. Most methods such as electron-probe microanalysis, transmission electron microscopy (TEM), etc. detect only regions of high impurity concentration, i.e. inclusions (particles captured during crystal growth), precipitates and their colonies. On the other hand, probe resistivity measurement reveals only regions of large size. However the inhomogeneities of small size (say 10 μm) and of relatively low concentration can have a crucial effect on crystal properties.For instance they control the quality of germanium detectors 3,4. Such impurity inhomogeneities can be detected and studied by low angle scattering of IR laser beams 5,6.

Keywords

Oxide Inclusion Free Carrier Concentration Crystal Region Soviet Physic Slow Fall 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    A.J.R. de Kock, Philips Res. Repts1(1973) 1.Google Scholar
  2. 2.
    G.A.Rozgonyi and C.W.Pearce, Appl.Phys.Le-t.32(1978) 747.CrossRefGoogle Scholar
  3. 3.
    V.K.Eremin, N.B.Strokan and N.I.Tisnek, Fiz.techn.polupr. (Soviet Physics -Semiconductors)9(1975) 1575.Google Scholar
  4. 4.
    V.K.Eremin, N.B.Strokan, N.I.Tisnek and A.Sh.Shamagdiev, Fis. techn.polupr. (Soviet Physics -Semiconductors)12(1978) 718.Google Scholar
  5. 5.
    V.V.Voronkov, G.I.Voronkova, B.V.Zubov, V.P.Kalinushkin, B.B.Krynetskiy, T.M.Murina and A.M.Prokhorov, Fis.tverd. tela (Soviet Physics -Solid State)19(1977) 1784.Google Scholar
  6. 6.
    V.V.Voronkov, G.I.Voronkova, B.V.Zubov, V.P.Kalinushkin, B .B.Krynetskiy, T.M.Murina and A.M.Prokhorov, Fiz.tverd.tela (Soviet Physics -Solid State)20(1978) 1365.Google Scholar
  7. 7.
    H .C.van de Hults, Light scattering by small particles (Wiley, N.Y.Chapman and Hall, L. 1957).Google Scholar
  8. 8.
    V.V.Voronkov, G.I.Voronkova, B.V.Zubov, V.P.Kalinushkin, E.A.Klimanov, T.M.Murina and A.M.Prokhorov, Fiz.techn.polupr. (Soviet Physics -Semiconductors)13(1979) 846.Google Scholar
  9. 9.
    V.V.Voronkov, G.I.Voronkova, B.V.Zubov, V.P.Kalinushkin, T.M.Murina, E.A.Petrova, A.M.Prokhorov and I.M.Tiginjanu, Fiz. techn.polupr. (Soviet Physics-Semiconductors)13(1979) 1137.Google Scholar
  10. 10.
    C.Haas, J.Phys.Chem.Solids15(1960) 108.CrossRefGoogle Scholar
  11. 11.
    A.J.R. de Kock, Acta Electron.16(1973) 303.Google Scholar
  12. 12.
    N.V.Veselovskaja, E.G.Sheihet, K.N.Neymark and E.S.Falkevich, in : Rost i legir. polupr. krist. i plen. (Growth and Doping of Semicond.Crystals and Films, Proc. Ail-Union Symp. on Growth and Synthesis of Semicond.Crystals and Films) 4th 1975 (Publ.1977) part 2, pp. 284–286 (Russian).Google Scholar
  13. 13.
    H.Foll and B.O.Kolbensen, Appl.Phys.8(1975) 319.CrossRefGoogle Scholar
  14. 14.
    P.M.Petroff and A.J.R. de Koch, J.Crystal Growth30(1975) 117.CrossRefGoogle Scholar
  15. 15.
    L.I.Bernewitz, B.O.Kolbesen, K.R.Mayer and G.E.Schuh, Appl. Phys. Lett.25(1974) 277.CrossRefGoogle Scholar
  16. 16.
    E.Nes, Phys.Stat.Sol. (a)33(1976) K5.CrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1983

Authors and Affiliations

  • V. P. Kalinushkin
    • 1
  • V. V. Voronkov
    • 1
  • G. I. Voronkova
    • 1
  • V. N. Golovina
    • 1
  • B. V. Zubov
    • 1
  • T. M. Murina
    • 1
  • A. M. Prokhorov
    • 1
  1. 1.The Physical InstituteAcademy of Sciences of the USSRMoscowUSSR

Personalised recommendations