Intensity Dependent Absorption in Semiconductors
Laser calorimetry has been used to study intensity dependent absorption process in semiconductors at 1.06 and 1.318 µm. New measurements of two photon absorption and two photon excited free carriers are reported. Saturation of the one photon absorption has been observed and evidence is presented for a pulse width dependence of the two photon absorption.
KeywordsInternal Reflection Photon Absorption Free Carrier Absorption High Order Process Linear Absorption Coefficient
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