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Intensity Dependent Absorption in Semiconductors

  • Alan F. Stewart
  • Michael Bass
Part of the NATO Advanced Study Institutes Series book series (NSSB, volume 84)

Abstract

Laser calorimetry has been used to study intensity dependent absorption process in semiconductors at 1.06 and 1.318 µm. New measurements of two photon absorption and two photon excited free carriers are reported. Saturation of the one photon absorption has been observed and evidence is presented for a pulse width dependence of the two photon absorption.

Keywords

Internal Reflection Photon Absorption Free Carrier Absorption High Order Process Linear Absorption Coefficient 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Plenum Press, New York 1983

Authors and Affiliations

  • Alan F. Stewart
    • 1
  • Michael Bass
    • 1
  1. 1.Center for Laser StudiesUniversity of Southern CaliforniaLos AngelesUSA

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